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IR1175 PDF预览

IR1175

更新时间: 2024-01-22 05:37:10
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器
页数 文件大小 规格书
9页 163K
描述
Synchronous Rectifier Driver

IR1175 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOIC包装说明:SOP,
针数:20Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.91高边驱动器:YES
接口集成电路类型:BUFFER OR INVERTER BASED MOSFET DRIVERJESD-30 代码:R-PDSO-G20
JESD-609代码:e0长度:12.8 mm
湿度敏感等级:3功能数量:1
端子数量:20最高工作温度:85 °C
最低工作温度:-40 °C标称输出峰值电流:2 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:2.65 mm最大供电电压:5.5 V
最小供电电压:4 V标称供电电压:5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.5 mmBase Number Matches:1

IR1175 数据手册

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ADVANCE INFORMATION  
Data Sheet PD 60178A  
IR1175  
Synchronous Rectifier Driver  
Features  
n Provides constant and proper gate drive to power  
Product Summary  
MOSFETs regardless of transformer output  
V
dd  
5Vdc  
Minimizes loss due to power MOSFET body  
n
drain diode conduction  
Stand alone operation - no ties to primary side  
I
2A/2A  
2MHz  
O+/-  
n
n Schmitt trigger input with double pulse suppress-  
ion allows operation in noisy environments  
n High current drive capability - 2A  
F
max  
Max lead time  
500nsec  
n High speed operation - 2MHz  
n Adaptable to multiple topologies (such as single-  
ended forward, double-ended forward)  
Package  
Description  
The IR1175 is a high speed CMOS controller designed  
to drive N-channel power MOSFETs used as synchro-  
nous rectifiers in high current, high frequency forward  
converters with output voltages equal or below 5VDC.  
Schmitt trigger inputs with double pulse suppression  
allow the controller to operate in noisy environments.  
The circuit does not require any ties to the primary  
side and derives its operating power directly from  
the secondary. The circuit functions by anticipating  
transformer output transitions, then turns the power  
MOSFETs on or off before the transitions of the trans-  
former to minimize body drain diode conduction and  
reduce associated losses. Turn on/off lead time can  
be adjusted to accommodate a variety of power  
MOSFET sizes and circuit conditions. The IR1175 also  
provides gate drive overlap/dead-time control via  
external components to further minimize diode con-  
duction by nulling effects of secondary loop and de-  
vice package inductance.  
20 Lead Surface Mount (SSOP-20)  

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