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IR11662SPBF PDF预览

IR11662SPBF

更新时间: 2024-02-22 06:23:47
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数 文件大小 规格书
25页 367K
描述
ADVANCED SMART RECTIFIER TM CONTROL IC

IR11662SPBF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SOP, SOP8,.25针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.4
Samacsys Confidence:Samacsys Status:Released
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=331805PCB Footprint:https://componentsearchengine.com/footprint.php?partID=331805
Samacsys PartID:331805Samacsys Image:https://componentsearchengine.com/Images/9/IR11662SPBF.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/IR11662SPBF.jpgSamacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Other
Samacsys Footprint Name:SOIC127P600X175-8NSamacsys Released Date:2017-01-11 16:49:50
Is Samacsys:N高边驱动器:YES
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:R-PDSO-G8
JESD-609代码:e3长度:4.9 mm
湿度敏感等级:1功能数量:1
端子数量:8标称输出峰值电流:4 A
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
电源:15 V认证状态:Not Qualified
座面最大高度:1.75 mm子类别:MOSFET Drivers
最大供电电压:18 V最小供电电压:11.4 V
标称供电电压:15 V表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30断开时间:0.075 µs
接通时间:0.095 µs宽度:3.9 mm
Base Number Matches:1

IR11662SPBF 数据手册

 浏览型号IR11662SPBF的Datasheet PDF文件第2页浏览型号IR11662SPBF的Datasheet PDF文件第3页浏览型号IR11662SPBF的Datasheet PDF文件第4页浏览型号IR11662SPBF的Datasheet PDF文件第5页浏览型号IR11662SPBF的Datasheet PDF文件第6页浏览型号IR11662SPBF的Datasheet PDF文件第7页 
Datasheet No - PD97468  
March 23, 2010  
IR11662S  
ADVANCED SMART RECTIFIER TM CONTROL IC  
Product Summary  
Features  
Secondary side high speed SR controller  
Flyback,  
Resonant Half-bridge  
Topology  
DCM, CrCM flyback and Resonant half-bridge  
topologies  
200V proprietary IC technology  
Max 500KHz switching frequency  
Anti-bounce logic and UVLO protection  
4A peak turn off drive current  
Micropower start-up & ultra low quiescent current  
10.7V gate drive clamp  
50ns turn-off propagation delay  
Vcc range from 11.3V to 20V  
Direct sensing of MOSFET drain voltage  
Enable function synchronized with MOSFET VDS  
transition  
VD  
200V  
VOUT  
10.7V Clamped  
+1A & -4A  
Io+ & I o- (typical)  
Turn on Propagation  
Delay  
60ns (typical)  
50ns (typical)  
Turn off Propagation  
Delay  
Package Options  
Cycle by Cycle MOT Check Circuit prevents multiple  
false trigger GATE pulses  
Lead-free  
Compatible with 0.3W Standby, Energy Star, CECP,  
etc.  
Typical Applications  
LCD & PDP TV, Telecom SMPS, AC-DC adapters,  
ATX SMPS, Server SMPS  
8-Lead SOIC  
Typical Connection Diagram  
Vin  
Rs  
Rdc  
U1  
XFM  
Cdc  
Cs  
1
2
3
4
8
7
6
5
VCC VGATE  
Ci  
OVT  
GND  
VS  
Co  
MOT  
EN  
RMOT  
VD  
Rg  
Q1  
IR11662S  
Rtn  
*Please note that this datasheet contains advance information that could change before the product is  
released to production.  
www.irf.com  
© 2010 International Rectifier  

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