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2N7336PBF PDF预览

2N7336PBF

更新时间: 2024-01-21 20:47:12
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 444K
描述
Power Field-Effect Transistor, 1A I(D), 100V, 0.7ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB

2N7336PBF 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:IN-LINE, R-CDIP-T14Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.73
其他特性:AVALANCHE RATED雪崩能效等级(Eas):75 mJ
配置:SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):1 A最大漏源导通电阻:0.8 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CDIP-T14
元件数量:4端子数量:14
工作模式:ENHANCEMENT MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL AND P-CHANNEL
最大脉冲漏极电流 (IDM):4 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

2N7336PBF 数据手册

 浏览型号2N7336PBF的Datasheet PDF文件第2页浏览型号2N7336PBF的Datasheet PDF文件第3页浏览型号2N7336PBF的Datasheet PDF文件第4页浏览型号2N7336PBF的Datasheet PDF文件第5页浏览型号2N7336PBF的Datasheet PDF文件第6页浏览型号2N7336PBF的Datasheet PDF文件第7页 
PD-90436G  
IRFG6110  
JANTX2N7336  
JANTXV2N7336  
POWER MOSFET  
THRU-HOLE (MO-036AB)  
REF:MIL-PRF-19500/598  
100V, Combination 2N-2P-CHANNEL  
HEXFET® MOSFET TECHNOLOGY  
Product Summary  
Part Number  
IRFG6110  
IRFG6110  
RDS(on)  
0.7Ω  
1.4Ω  
ID  
1.0A  
-0.75A  
CHANNEL  
N
P
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors. The  
efficient geometry design achieves very low on-state resistance  
combined with high transconductance. HEXFET transistors  
also feature all of the well-established advantages of MOSFETs,  
such as voltage control, very fast switching, ease of paralleling  
and electrical parameter temperature stability. They are well-  
suited for applications such as switching power supplies, motor  
controls, inverters, choppers, audio amplifiers, high energy  
pulse circuits, and virtually any application where high reliability  
is required. The HEXFET transistor’s totally isolated package  
eliminates the need for additional isolating material between the  
device and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
MO-036AB  
Features:  
n
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Dynamic dv/dt Rating  
Light-weight  
Absolute Maximum Ratings (Per Die)  
Parameter  
N-Channel  
1.0  
P-Channel  
-0.75  
-0.5  
Units  
I
@ V  
@ V  
=± 10V, T = 25°C Continuous Drain Current  
D
D
GS  
GS  
C
A
I
=± 10V, T = 100°C Continuous Drain Current  
0.6  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
4.0  
-3.0  
DM  
@ T = 25°C  
P
D
1.4  
1.4  
W
W/°C  
V
C
0.011  
±20  
0.011  
±20  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy  
Avalanche Current À  
GS  
E
75 Á  
1.0  
75 Ä  
-0.75  
0.14  
mJ  
A
AS  
I
AR  
E
AR  
dv/dt  
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt  
Operating Junction  
0.14  
5.5 Â  
mJ  
V/ns  
-5.5 Å  
T
-55 to 150  
J
°C  
g
T
Storage Temperature Range  
STG  
Lead Temperature  
Weight  
300 (0.63 in./1.6 mm from case for 10s)  
1.3 (Typical)  
For footnotes, refer to the last page  
www.irf.com  
1
02/17/10  

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