是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | IN-LINE, R-CDIP-T14 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.73 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 75 mJ |
配置: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 1 A | 最大漏源导通电阻: | 0.8 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CDIP-T14 |
元件数量: | 4 | 端子数量: | 14 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
最大脉冲漏极电流 (IDM): | 4 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N735 | ETC | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18 |
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2N735A | ETC | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18 |
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2N736 | ETC | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18 |
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2N7368 | MICROSEMI | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, Metal |
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2N7368JAN | MICROSEMI | NPN HIGH POWER SILICON TRANSISTOR |
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2N7368JANTX | MICROSEMI | NPN HIGH POWER SILICON TRANSISTOR |
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