2N6845

更新时间： 2024-02-18 02:24:30

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
6页	202K
描述
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.60ohm, Id=-4.0A)

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2N6845 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	CYLINDRICAL, O-MBCY-W3	Reach Compliance Code：	compliant
风险等级：	5.59	配置：	SINGLE
最小漏源击穿电压：	100 V	最大漏源导通电阻：	0.6 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-205AF
JESD-30 代码：	O-MBCY-W3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	METAL	封装形状：	ROUND
封装形式：	CYLINDRICAL	峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL	认证状态：	Not Qualified
参考标准：	CECC	表面贴装：	NO
端子面层：	NOT SPECIFIED	端子形式：	WIRE
端子位置：	BOTTOM	处于峰值回流温度下的最长时间：	40
晶体管元件材料：	SILICON	Base Number Matches：	1

2N6845 数据手册

Previous Datasheet

Index

Next Data Sheet

Provisional Data Sheet No. PD-9.552B

JANTX2N6845

JANTXV2N6845

[REF:MIL-PRF-19500/563]

HEXFET^®POWER MOSFET

[GENERIC:IRFF9120]

P-CHANNEL

-100 Volt, 0.60Ω HEXFET

Product Summary

Part Number

JANTX2N6845

JANTXV2N6845

BVDSS

RDS(on)

HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transis-

tors. The efficient geometry achieves very low on-

state resistance combined with high transconductance.

-4.0A

-100V

0.60Ω

HEXFET transistors also feature all of the well-es-

tablish advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are

well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio

amplifiers, and high energy pulse circuits, and virtu-

ally any application where high reliability is required.

Features:

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

Absolute Maximum Ratings

Parameter

JANTX2N6845, JANTXV2N6845 Units

@ V

= -10V, T = 25°C Continuous Drain Current

-4.0

@ V

= -10V, T = 100°C Continuous Drain Current

-2.6

-16

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ➂

Operating Junction

@ T = 25°C

W/K ➄

0.16

dv/dt

±20

-5.0

V/ns

-55 to 150

Storage Temperature Range

Lead Temperature

STG

(0.063 in. (1.6mm) from

300

^oC

case for 10.5 seconds)

0.98 (typical)

Weight

To Order

12 3 4 5 6

下载PDF

与2N6845相关器件

型号	品牌	描述	获取价格	数据表
2N6845E	INFINEON	Power Field-Effect Transistor, 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se	获取价格
2N6845EA	INFINEON	Power Field-Effect Transistor, 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se	获取价格
2N6845EC	INFINEON	Power Field-Effect Transistor, 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se	获取价格
2N6845ED	INFINEON	Power Field-Effect Transistor, 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Se	获取价格
2N6845LCC4	SEME-LAB	P–CHANNEL POWER MOSFET	获取价格
2N6845PBF	INFINEON	Power Field-Effect Transistor, 2.5A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Met	获取价格