是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | POST/STUD MOUNT, O-MUPM-H3 | Reach Compliance Code: | unknown |
HTS代码: | 8541.30.00.80 | 风险等级: | 5.83 |
标称电路换相断开时间: | 80 µs | 配置: | SINGLE |
关态电压最小值的临界上升速率: | 500 V/us | 最大直流栅极触发电流: | 150 mA |
最大直流栅极触发电压: | 2.5 V | 最大维持电流: | 20 mA |
JEDEC-95代码: | TO-209AC | JESD-30 代码: | O-MUPM-H3 |
最大漏电流: | 10 mA | 湿度敏感等级: | 1 |
通态非重复峰值电流: | 2.2 A | 元件数量: | 1 |
端子数量: | 3 | 最大通态电流: | 170000 A |
最高工作温度: | 125 °C | 最低工作温度: | -45 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 峰值回流温度(摄氏度): | 225 |
认证状态: | Not Qualified | 最大均方根通态电流: | 175 A |
断态重复峰值电压: | 1000 V | 重复峰值反向电压: | 1000 V |
子类别: | Silicon Controlled Rectifiers | 表面贴装: | NO |
端子形式: | HIGH CURRENT CABLE | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 触发设备类型: | SCR |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
111RK120 | INFINEON | Silicon Controlled Rectifier, 175A I(T)RMS, 170000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E |
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111RK120M | INFINEON | Silicon Controlled Rectifier, 175A I(T)RMS, 170000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 E |
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111RK20M | INFINEON | Silicon Controlled Rectifier, 175A I(T)RMS, 100000mA I(T), 200V V(DRM), 200V V(RRM), 1 Ele |
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111RK40 | INFINEON | Silicon Controlled Rectifier, 175A I(T)RMS, 100000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele |
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111RK40M | INFINEON | Silicon Controlled Rectifier, 175A I(T)RMS, 100000mA I(T), 400V V(DRM), 400V V(RRM), 1 Ele |
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111RK60 | INFINEON | Silicon Controlled Rectifier, 175 A, 600 V, SCR, TO-209AC |
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