是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8504.50.80.00 | 风险等级: | 5.83 |
构造: | Epoxy Coated | 型芯材料: | Ferrite |
直流电阻: | 3.2 Ω | 标称电感 (L): | 82 µH |
电感器类型: | GENERAL PURPOSE INDUCTOR | 引线直径: | 0.508 mm |
引线长度: | 36.515 mm | 最高工作温度: | 105 °C |
最低工作温度: | -55 °C | 封装直径: | 3.05 mm |
封装长度: | 6.6 mm | 封装形式: | Axial |
包装方法: | TR | 最小质量因数(标称电感时): | 60 |
最大额定电流: | 0.175 A | 自谐振频率: | 14 MHz |
系列: | IRF | 容差: | 5% |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF-182UH+-5%RJ4 | VISHAY |
获取价格 |
General Purpose Inductor, 82uH, 5%, Ferrite-Core, | |
IRF1902 | INFINEON |
获取价格 |
Power MOSFET(Vdss=20V) | |
IRF1902PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF1902TR | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
IRF1902TRPBF | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
IRF19520G | VISHAY |
获取价格 |
Power Field-Effect Transistor, 5.2A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Met | |
IRF200 | ETC |
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50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED | |
IRF200B211 | INFINEON |
获取价格 |
Brushed Motor drive applications | |
IRF200B211_15 | INFINEON |
获取价格 |
Brushed Motor drive applications | |
IRF200P222 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 182A I(D), 200V, 0.0066ohm, 1-Element, N-Channel, Silicon, |