生命周期: | Obsolete | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8504.50.80.00 |
风险等级: | 5.84 | Is Samacsys: | N |
型芯材料: | FERRITE | 直流电阻: | 0.72 Ω |
标称电感 (L): | 10 µH | 电感器应用: | RF INDUCTOR |
电感器类型: | GENERAL PURPOSE INDUCTOR | JESD-609代码: | e3 |
功能数量: | 1 | 端子数量: | 2 |
最高工作温度: | 105 °C | 最低工作温度: | -55 °C |
最小质量因数(标称电感时): | 50 | 最大额定电流: | 0.37 A |
自谐振频率: | 50 MHz | 形状/尺寸说明: | TUBULAR PACKAGE |
屏蔽: | NO | 表面贴装: | NO |
端子面层: | TIN | 端子位置: | AXIAL |
端子形状: | WIRE | 测试频率: | 7.9 MHz |
容差: | 10% | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF1104 | INFINEON |
获取价格 |
Power MOSFET(Vdss=40V, Rds(on)=0.009ohm, Id=1 | |
IRF1104L | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF1104LPBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF1104PBF | INFINEON |
获取价格 |
HEXFET POWER MOSFET ( VDSS = 40V , RDS(on) = | |
IRF1104S | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF1104SPBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF1104STRLPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Me | |
IRF1104STRR | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Me | |
IRF1104STRRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Me | |
IRF-110UH+/-10% | VISHAY |
获取价格 |
General Fixed Inductor, 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LE |