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IRAM136-3023B PDF预览

IRAM136-3023B

更新时间： 2024-11-23 03:44:31
品牌 Logo 应用领域
英飞凌 - INFINEON 运动控制电子器件信号电路电动机控制电机局域网
页数 文件大小 规格书
16页 219K
描述
Integrated Power Hybrid IC for Low Voltage Motor Applications

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中文翻译

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IRAM136-3023B 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：, SIP18/22H,1.3FLReach Compliance Code：compliant
HTS代码：8542.39.00.01风险等级：5.78
模拟集成电路 - 其他类型：AC MOTOR CONTROLLERJESD-30 代码：R-XZFM-T18
功能数量：1端子数量：18
最高工作温度：100 °C最低工作温度：-20 °C
封装主体材料：UNSPECIFIED封装等效代码：SIP18/22H,1.3FL
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED电源：15 V
认证状态：Not Qualified子类别：Motion Control Electronics
最大供电电流 (Isup)：3.35 mA最大供电电压 (Vsup)：20 V
最小供电电压 (Vsup)：12 V标称供电电压 (Vsup)：15 V
表面贴装：NO技术：HYBRID
温度等级：OTHER端子形式：THROUGH-HOLE
端子节距：2.54 mm端子位置：ZIG-ZAG
处于峰值回流温度下的最长时间：NOT SPECIFIED

IRAM136-3023B 数据手册

 浏览型号IRAM136-3023B的Datasheet PDF文件第2页浏览型号IRAM136-3023B的Datasheet PDF文件第3页浏览型号IRAM136-3023B的Datasheet PDF文件第4页浏览型号IRAM136-3023B的Datasheet PDF文件第5页浏览型号IRAM136-3023B的Datasheet PDF文件第6页浏览型号IRAM136-3023B的Datasheet PDF文件第7页 
PD-97270 RevA  
IRAM136-3023B  
Series  
Integrated Power Hybrid IC for  
Low Voltage Motor Applications  
30A, 150V  
with Internal Shunt Resistor  
Description  
International Rectifier's IRAM136-3023B is a 30A, 150V Integrated Power Hybrid IC with Internal Shunt  
Resistor for low voltage Motor Drives applications such as electric vehicles, portable power tools and light  
industrial applications. IR's technology offers an extremely compact, high performance AC motor-driver in a  
single isolated package to simplify design.  
This advanced HIC is a combination of IR's low RDS(on) Advance Planar MOSFET Super Rugged technology  
and the industry benchmark 3-Phase high voltage, high speed driver in a fully isolated thermally enhanced  
package. A built-in temperature monitor and over-current and over-temperature protections and integrated  
under-voltage lockout function, deliver high level of protection and fail-safe operation. Using a new  
developed single in line package (SiP3) with heat spreader for the power die along with full transfer mold  
structure minimizes PCB space and resolves isolation problems to heatsink.  
Features  
• Integrated Gate Drivers  
• Temperature Monitor and Protection  
• Overcurrent shutdown  
• Low RDS(on) Advance Planar Super Rugged Technology  
• Undervoltage lockout for all channels  
• Matched propagation delay for all channels  
• 5V Schmitt-triggered input logic  
• Cross-conduction prevention logic  
• Lower di/dt gate driver for better noise immunity  
• Motor Power up to 4.0kW / 48~100 Vdc  
• Fully Isolated Package, Isolation 2000VRMS min  
Absolute Maximum Ratings  
Parameter  
Description  
Value  
Units  
VBR(DSS)  
V+  
MOSFET Blocking Voltage  
150  
100  
V
Positive Bus Input Voltage  
IO @ TC=25°C  
RMS Phase Current (Note 1)  
RMS Phase Current (Note 1)  
Pulsed RMS Phase Current (Note 1 and 2)  
PWM Carrier Frequency  
30  
IO @ TC=100°C  
A
15  
IO  
56  
FPWM  
20  
kHz  
W
PD  
Power Dissipation per MOSFET @ TC =25°C  
Isolation Voltage (1min)  
89  
VISO  
VRMS  
2000  
TJ (MOSFET & IC)  
Maximum Operating Junction Temperature  
Operating Case Temperature Range  
Storage Temperature Range  
Mounting Torque (M4 screw)  
+150  
-20 to +100  
-40 to +125  
0.7 to 1.17  
TC  
°C  
TSTG  
T
Nm  
Note 1: Sinusoidal modulation at V+=100V, TJ=150°C, FPWM=20kHz, modulation depth=0.8, pf=0.6, see Figure 3  
Note 2: tP<100ms; TC=25°C; FPWM=20kHz, limited by IBUS-TRIP, see Table "Inverter Section Electrical Characteristics"  
www.irf.com  
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