Datasheet > IR480DG06HCBPBF

IR480DG06HCBPBF

更新时间： 2024-11-11 20:10:55

品牌	Logo	应用领域
英飞凌 - INFINEON		高功率电源二极管
页数	文件大小	规格书
3页	242K
描述
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER

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IR480DG06HCBPBF 数据手册

Bulletin I0137J 05/99

IR480DG..HCB SERIES

HIGH POWER RECTIFIER DIODES

Junction Size:

Wafer Size:

Square 480 mils

V_RRMClass:

600 and 1200 V

PassivationProcess:

Glassivated MESA

Reference IR Packaged Part: T110HF Series

Major Ratings and Characteristics

Parameters

Units

TestConditions

V_FM

MaximumForwardVoltage

940mV

T_J=25°C I_F=25A

V_RRMReverseBreakdownVoltageRange

600 and1200V T_J=25°C I_R=100µA

(1)

(1) Nitrogen flow on die edge.

Mechanical Characteristics

NominalBackMetalComposition,Thickness

Cr-Ni -Ag(1KA-4KA-6KA)

NominalFrontMetalComposition,Thickness

ChipDimensions

Cr - Ni - Ag(1KA- 4KA- 6KA)

480x480mils(seedrawing)

100mm, withstd. <110>flat

300µm

WaferDiameter

WaferThickness

MaximumWidthofSawingLine

130µm

Reject Ink Dot Size

0.25mmdiameterminimum

Seedrawing

InkDotLocation

RecommendedStorageEnvironment

Storageinoriginalcontainer, indessicated

nitrogen,withnocontamination

12 3

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