Datasheet > IR340LM06CS02

IR340LM06CS02

更新时间： 2024-11-28 03:11:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	48K
描述
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER

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IR340LM06CS02 数据手册

Bulletin I0152J 10/03

IR340LM..CS02CB SERIES

FAST RECOVERY DIODES

Junction Size:

Wafer Size:

Rectangular 350 x 230 mils

V_RRMClass:

200 to 600 V

Passivation Process:

Glassivated MOAT

Reference IR Packaged Part: 60EPF Series

Major Ratings and Characteristics

Parameters

Units

TestConditions

V_FM

MaximumForwardVoltage

1300 mV

T_J= 25°C, I_F= 60 A

V_RRMReverse BreakdownVoltageRange

200 to 600 V T_J= 25°C, I_RRM= 100 µA

(1)

(1) Nitrogen flow on die edge.

Mechanical Characteristics

Nominal Back Metal Composition, Thickness

Cr - Ni - Ag (1 KA - 4 KA - 6 KA)

100% Al, (20 µm)

Nominal Front Metal Composition, Thickness

ChipDimensions

350 x 230 mils (8.89x5.84 mm) - see drawing

Wafer Diameter

100 mm, with std. < 110 > flat

Wafer Thickness

260 µm

45 µm

Maximum Width of Sawing Line

Reject Ink Dot Size

InkDotLocation

0.25 mm diameter minimum

Seedrawing

RecommendedStorageEnvironment

nitrogen,withnocontamination

Storageinoriginalcontainer, indessicated

Document Number: 93899

www.vishay.com

12 3 4

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