Datasheet > IR2233JTRPBF

IR2233JTRPBF

更新时间： 2024-09-18 21:13:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
27页	423K
描述
MOSFET Driver, CMOS, PQCC44,

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数据手册

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IR2233JTRPBF 数据手册

Data Sheet No. PD60107 revX

)&(PbF)

IR2133/IR2135(J S

(

)&(PbF)

IR2233 IR2235 J S

3-PHASE BRIDGE DRIVER

Features

Product Summary

• Floating channel designed for bootstrap operation

Fully operational to +600V or+1200V

Tolerant to negative transient voltage

dV/dt immune

600V or 1200V max.

200 mA / 420 mA

10 - 20V or 12 - 20V

750/700 ns

OFFSET

I +/-

• Gate drive supply range from 10V/12V to 20V DC and

up to 25V for transient

OUT

• Undervoltage lockout for all channels

• Over-current shut down turns off all six drivers

• Independent 3 half-bridge drivers

• Matched propagation delay for all channels

• 2.5V logic compatible

(typ.)

on/off

Deadtime (typ.)

Packages

250 ns

• Outputs out of phase with inputs

• All parts are also available LEAD-FREE

Description

The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed

power MOSFET and IGBT driver with three independent high side and

low side referenced output channels for 3-phase applications. Propri-

etary HVIC technology enables ruggedized monolithic construction.

Logic inputs are compatible with CMOS or LSTTL outputs, down to

2.5V logic. An independent operational amplifier provides an analog

feedback of bridge current via an external current sense resistor. A

current trip function which terminates all six outputs can also be de-

28-Lead SOIC

28-Lead PDIP

44-Lead PLCC w/o 12 leads

rived from this resistor. A shutdown function is available to terminate all six outputs. An open drain FAULT signal is provided to

indicate that an over-current or undervoltage shutdown has occurred. Fault conditions are cleared with the FLT-CLR lead. The

output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are

matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or

IGBTs in the high side configuration which operates up to 600 volts or 1200 volts.

Typical Connection

up to 600V or 1200V

(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only.

Please refer to our Application Notes and DesignTips for proper circuit board layout.

www.irf.com

12 3 4 5 6 7...27

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