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IR2233JSPBF PDF预览

IR2233JSPBF

更新时间: 2024-11-07 12:56:35
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器
页数 文件大小 规格书
27页 433K
描述
3-PHASE BRIDGE DRIVER

IR2233JSPBF 数据手册

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Data Sheet No. PD60107 revX  
)&(PbF)  
&
IR2133/IR2135(J S  
/
(
)&(PbF)  
&
IR2233 IR2235 J S  
3-PHASE BRIDGE DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
Fully operational to +600V or+1200V  
Tolerant to negative transient voltage  
dV/dt immune  
V
600V or 1200V max.  
200 mA / 420 mA  
10 - 20V or 12 - 20V  
750/700 ns  
OFFSET  
I +/-  
O
Gate drive supply range from 10V/12V to 20V DC and  
up to 25V for transient  
V
OUT  
Undervoltage lockout for all channels  
Over-current shut down turns off all six drivers  
Independent 3 half-bridge drivers  
Matched propagation delay for all channels  
2.5V logic compatible  
t
(typ.)  
on/off  
Deadtime (typ.)  
Packages  
250 ns  
Outputs out of phase with inputs  
All parts are also available LEAD-FREE  
Description  
The IR2133IR2135/IR2233IR2355 (J&S) are high voltage, high speed  
power MOSFET and IGBT driver with three independent high side and  
low side referenced output channels for 3-phase applications. Propri-  
etary HVIC technology enables ruggedized monolithic construction.  
Logic inputs are compatible with CMOS or LSTTL outputs, down to  
2.5V logic. An independent operational amplifier provides an analog  
feedback of bridge current via an external current sense resistor. A  
current trip function which terminates all six outputs can also be de-  
28-Lead SOIC  
28-Lead PDIP  
44-Lead PLCC w/o 12 leads  
rived from this resistor. A shutdown function is available to terminate all six outputs. An open drain FAULT signal is provided to  
indicate that an over-current or undervoltage shutdown has occurred. Fault conditions are cleared with the FLT-CLR lead. The  
output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are  
matched to simplify use in high frequency applications. The floating channels can be used to drive N-channel power MOSFETs or  
IGBTs in the high side configuration which operates up to 600 volts or 1200 volts.  
Typical Connection  
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only.  
Please refer to our Application Notes and DesignTips for proper circuit board layout.  
www.irf.com  
1

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