Datasheet > IR2213S

IR2213S

更新时间： 2024-11-24 23:58:47

品牌	Logo	应用领域
其他 - ETC		驱动器接口集成电路光电二极管
页数	文件大小	规格书
11页	138K
描述
High and Low Side Driver. Noninverting Inputs in a 16-lead SOIC package

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数据手册

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IR2213S 数据手册

Preliminary Data Sheet No. PD60030-M

IR2213( )

HIGH AND LOW SIDE DRIVER

Features

Product Summary

Floating channel designed for bootstrap operation

•

1200V max.

1.7A / 2A

12 - 20V

OFFSET

Fully operational to +1200V

Tolerant to negative transient voltage

dV/dt immune

Gate drive supply range from 12 to 20V

Undervoltage lockout for both channels

3.3V logic compatible

Separate logic supply range from 3.3V to 20V

Logic and power ground ±5V offset

CMOS Schmitt-triggered inputs with pull-down

Cycle by cycle edge-triggered shutdown logic

I +/-

•

OUT

•

(typ.)

280 & 225 ns

30 ns

on/off

Delay Matching

•

Packages

Matched propagation delay for both channels

•

Outputs in phase with inputs

•

Description

The IR2213(S) is a high voltage, high speed power

MOSFET and IGBT driver with independent high and

low side referenced output channels. Proprietary

HVIC and latch immune CMOS technologies enable

ruggedized monolithic construction. Logic inputs are

compatible with standard CMOS or LSTTL outputs,

down to 3.3V logic. The output drivers feature a high

16-Lead SOIC

(wide body)

14-Lead PDIP

pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to

simplify use in high frequency applications. The floating channel can be used to drive an N-channel power

MOSFET or IGBT in the high side configuration which operates up to 1200 volts.

Typical Connection

up to 1200V

V_DD

HIN

V_B

V_S

V_DD

HIN

LOAD

LIN

V_SS

V_CC

COM

LIN

V_SS

V_CC

(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical

connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.

www.irf.com

12 3 4 5 6 7...11

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