Datasheet > IR2213PBF_15

IR2213PBF_15

更新时间： 2024-09-19 01:12:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
18页	1209K
描述
High and Low Side Driver

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中文翻译

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数据手册

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IR2213PBF_15 数据手册

IR2213(S)PBF

High and Low Side Driver

Features

Product Summary



Floating channel designed for bootstrap operation

Fully operational to +1200 V

V_OFFSET(max)

1200 V

1.7 A / 2 A

12 V – 20 V

280 ns / 225 ns

30 ns

Tolerant to negative transient voltage

dV/dt immune

Gate drive supply range from 12 V to 20 V

Undervoltage lockout for both channels

3.3 V logic compatible

Separate logic supply range from 3.3 V to 20 V

Logic and power ground ±5 V offset

CMOS Schmitt-triggered inputs with pull-down

Cycle by cycle edge-triggered shutdown logic

Matched propagation delay for both channels

Outputs in phase with inputs

O+/-

OUT

t_on/off(typical)

Delay Matching

Description

Package Options

The IR2213(S) is a high voltage, high speed power

MOSFET and IGBT driver with independent high and low

side referenced output channels. Proprietary HVIC and

latch immune CMOS technologies enable ruggedized

monolithic construction. Logic inputs are compatible with

standard CMOS or LSTTL outputs, down to 3.3 V logic.

The output drivers feature a high pulse current buffer stage

designed

for

minimum

driver

cross-conduction.

Propagation delays are matched to simplify use in high

frequency applications. The floating channel can be used

to drive an N-channel power MOSFET or IGBT in the high

side configuration which operates up to 1200 V.

16 Lead SOIC

(Wide Body)

14 Lead PDIP

Ordering Information

Standard Pack

Base Part Number

Package Type

Orderable Part Number

Form

Quantity

IR2213SPBF

IR2213PBF

SO16WB

PDIP14

Tube

Tape and Reel

Tube

IR2213SPBF

IR2213STRPBF

IR2213PBF

1000

www.irf.com

February 4, 2014

12 3 4 5 6 7...18

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