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IR2213PBF PDF预览

IR2213PBF

更新时间: 2024-11-26 01:12:19
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
18页 1209K
描述
High and Low Side Driver

IR2213PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:DIP, DIP14,.3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:26 weeks风险等级:1.13
高边驱动器:YES接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-PDIP-T14长度:19.305 mm
功能数量:1端子数量:14
标称输出峰值电流:2.5 A封装主体材料:PLASTIC/EPOXY
封装代码:DIP封装等效代码:DIP14,.3
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED电源:15 V
认证状态:Not Qualified座面最大高度:5.33 mm
子类别:MOSFET Drivers最大供电电压:20 V
最小供电电压:12 V标称供电电压:15 V
电源电压1-最大:1220 V电源电压1-分钟:7 V
表面贴装:NO技术:CMOS
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mmBase Number Matches:1

IR2213PBF 数据手册

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IR2213(S)PBF  
High and Low Side Driver  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
Fully operational to +1200 V  
VOFFSET (max)  
1200 V  
1.7 A / 2 A  
12 V 20 V  
280 ns / 225 ns  
30 ns  
Tolerant to negative transient voltage  
dV/dt immune  
Gate drive supply range from 12 V to 20 V  
Undervoltage lockout for both channels  
3.3 V logic compatible  
Separate logic supply range from 3.3 V to 20 V  
Logic and power ground ±5 V offset  
CMOS Schmitt-triggered inputs with pull-down  
Cycle by cycle edge-triggered shutdown logic  
Matched propagation delay for both channels  
Outputs in phase with inputs  
I
O+/-  
V
OUT  
ton/off (typical)  
Delay Matching  
Description  
Package Options  
The IR2213(S) is a high voltage, high speed power  
MOSFET and IGBT driver with independent high and low  
side referenced output channels. Proprietary HVIC and  
latch immune CMOS technologies enable ruggedized  
monolithic construction. Logic inputs are compatible with  
standard CMOS or LSTTL outputs, down to 3.3 V logic.  
The output drivers feature a high pulse current buffer stage  
designed  
for  
minimum  
driver  
cross-conduction.  
Propagation delays are matched to simplify use in high  
frequency applications. The floating channel can be used  
to drive an N-channel power MOSFET or IGBT in the high  
side configuration which operates up to 1200 V.  
16 Lead SOIC  
(Wide Body)  
14 Lead PDIP  
Ordering Information  
Standard Pack  
Base Part Number  
Package Type  
Orderable Part Number  
Form  
Quantity  
45  
IR2213SPBF  
IR2213SPBF  
IR2213PBF  
SO16WB  
SO16WB  
PDIP14  
Tube  
Tape and Reel  
Tube  
IR2213SPBF  
IR2213STRPBF  
IR2213PBF  
1000  
25  
1
www.irf.com  
© 2014 International Rectifier  
February 4, 2014  

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