Datasheet > IR2189S

IR2189S

更新时间： 2024-11-07 19:37:31

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动光电二极管接口集成电路驱动器
页数	文件大小	规格书
9页	185K
描述
Half Bridge Based MOSFET Driver, 0.35A, CMOS, PDSO8, SOIC-8

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数据手册

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IR2189S 数据手册

Preliminary Data Sheet No. PD60163-K

IR2109/IR21094

IR2189

HIGH AND LOW SIDE DRIVER

Features

•

Product Summary

Floating channel designed for bootstrap operation

Fully operational to +600V

600V max.

Tolerant to negative transient voltage

dV/dt immune

Gate drive supply range from 10 to 20V

(IR2109(4)) or 5 - 20V (2189)

Undervoltage lockout for both channels

5V Schmitt triggered input logic

OFFSET

I +/-

120 mA / 250 mA

•

10 - 20V

5 - 20V

OUT

•

(IR2109(4))

(IR2189)

Cross-conduction prevention logic

Matched propagation delay for both channels

High side output in phase with IN input

Logic and power ground +/- 5V offset.

Internal 500ns dead-time, and programmable

(typ.)

180 ns

500 ns

on/off

Delay matching

(programmable up to 5uS for IR21094)

up to 5us with one external R resistor (IR21094)

Lower di/dt gate driver for better noise immunity

Shut down input turns off both channels.

•

Packages

Description

The IR2109(4)/IR2189 are high voltage, high speed

power MOSFET and IGBT drivers with dependant high

and low side referenced output channels. Proprietary

HVIC and latch immune CMOS technologies enable

ruggedized monolithic construction.The logic input is

compatible with standard CMOS or LSTTL output. The

output drivers feature a high pulse current buffer stage

designed for minimum driver cross-conduction. The

floating channel can be used to drive an N-channel

power MOSFET or IGBT in the high side configura-

8 Lead SOIC

14 Lead SOIC

14 Lead PDIP

8 Lead PDIP

tion which operates up to 600 volts.

Typical Connection

up to 600V

V_CC

V_B

V_S

LOAD

COM

up to 600V

IR21094

V_B

V_S

IR2109/IR2189

V_CC

LOAD

V_SS

COM

V_SS

R_DT

www.irf.com

12 3 4 5 6 7...9

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