Data Sheet No. PD60172-E
( )( )
S
IR2181 4
HIGH AND LOW SIDE DRIVER
Features
Packages
Floating channel designed for bootstrap operation
•
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
14-Lead PDIP
IR21814
8-Lead SOIC
IR2181S
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V and 5V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5V offset.
Lower di/dt gate driver for better noise immunity
Output source/sink current capability 1.4A/1.8A
•
•
•
•
8-Lead PDIP
•
IR2181
14-Lead SOIC
IR21814S
•
•
Description
IR2181/IR2183/IR2184 Feature Comparison
Cross-
The IR2181(4)(S) are high voltage,
high speed power MOSFET and IGBT
drivers with independent high and low
side referenced output channels. Pro-
prietary HVIC and latch immune
CMOS technologies enable rugge-
dized monolithic construction. The
logic input is compatible with standard
Input
logic
conduction
prevention
logic
Part
Dead-Time
Ground Pins
Ton/Toff
2181
21814
2183
COM
VSS/COM
COM
HIN/LIN
HIN/LIN
IN/SD
no
none
180/220 ns
180/220 ns
680/270 ns
Internal 500ns
Program 0.4 ~ 5 us
Internal 500ns
yes
yes
21834
2184
VSS/COM
COM
21844
Program 0.4 ~ 5 us
VSS/COM
CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage
designed for minimum driver cross-conduction.The floating channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
VCC
VCC
VB
HO
VS
HIN
LIN
HIN
LIN
TO
LOAD
COM
LO
up to 600V
IR2181
IR21814
HO
VB
VCC
HIN
VCC
HIN
LIN
VS
TO
LOAD
LIN
(Refer to Lead Assignments for correct pin
configuration).This/These diagram(s) show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.
VSS
COM
LO
VSS
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