Preliminary Data Sheet No. PD60030 rev.O
IR2213(S)&(PbF)
HIGH AND LOW SIDE DRIVER
Features
Product Summary
Floating channel designed for bootstrap operation
•
V
1200V max.
1.7A / 2A
12 - 20V
OFFSET
Fully operational to +1200V
Tolerant to negative transient voltage
dV/dt immune
I +/-
O
Gate drive supply range from 12 to 20V
•
V
OUT
Undervoltage lockout for both channels
•
3.3V logic compatible
•
t
(typ.)
280 & 225 ns
30 ns
Separate logic supply range from 3.3V to 20V
Logic and power ground ±±V offset
on/off
Delay Matching
Packages
CMOS Schmitt-triggered inputs with pull-down
•
Cycle by cycle edge-triggered shutdown logic
•
Matched propagation delay for both channels
•
•
Outputs in phase with inputs
• Also available LEAD-FREE (PbF)
Description
The IR2213(S) is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic inputs are
compatible with standard CMOS or LSTTL outputs,
down to 3.3V logic. The output drivers feature a high
16-Lead SOIC
(wide body)
14-Lead PDIP
pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration which operates up to 1200 volts.
ꢃꢄꢅꢆꢇꢅꢈꢉꢊꢊꢋ
Typical Connection
ꢀꢍ
ꢋ
ꢋ
ꢋ
ꢋ
ꢐꢐ
ꢐꢐ
ꢑ
ꢒ
ꢀꢁꢂ
ꢒꢐ
ꢎꢁꢂ
ꢀꢁꢂ
ꢒꢐ
ꢎꢁꢂ
ꢌꢍ
ꢎꢍꢏꢐ
ꢋ
ꢓꢓ
ꢋ
ꢓꢍꢔ
ꢎꢍ
ꢋ
ꢒꢒ
ꢒꢒ
ꢋ
ꢓꢓ
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
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