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IR2155 PDF预览

IR2155

更新时间: 2024-11-06 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 驱动器
页数 文件大小 规格书
6页 196K
描述
SELF-OSCILLATING HALF-BRIDGE DRIVER

IR2155 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:DIP,Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
风险等级:5.4其他特性:FOR NEW DESIGNS, USE IR2153 AND IR21531
高边驱动器:YES输入特性:DIFF
接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码:R-PDIP-T8
长度:9.88 mm功能数量:1
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C输出特性:TOTEM-POLE
标称输出峰值电流:0.5 A输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:5.33 mm电源电压1-最大:620 V
电源电压1-Nom:12 V表面贴装:NO
技术:CMOS温度等级:AUTOMOTIVE
端子形式:THROUGH-HOLE端子节距:2.54 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.62 mmBase Number Matches:1

IR2155 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Data Sheet No. PD-6.029G  
IR2155  
SELF-OSCILLATING HALF-BRIDGE DRIVER  
Features  
Product Summary  
n Floating channel designed for bootstrap operation  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
n Undervoltage lockout  
V
600V max.  
50%  
OFFSET  
Duty Cycle  
I +/-  
210 mA / 420 mA  
10 - 20V  
O
n Programmable oscillator frequency  
1
V
OUT  
f =  
1.4 ×(RT +150)× CT  
Deadtime (typ.)  
Package  
1.2 µs  
n Matched propagation delay for both channels  
n Micropower supply startup current of 125 µA typ.  
n Low side output in phase with RT  
Description  
The IR2155 is a high voltage, high speed, self-os-  
cillating power MOSFET and IGBT driver with both high  
and low side referenced output channels. Proprietary  
HVIC and latch immune CMOS technologies enable  
ruggedized monolithic construction.The front end fea-  
tures a programmable oscillator which is similar to the  
555 timer. The output drivers feature a high pulse cur-  
rent buffer stage and an internal deadtime designed for  
minimum driver cross-conduction. Propagation delays  
for the two channels are matched to simplify use in  
50% duty cycle applications.The floating channel can  
be used to drive an N-channel power MOSFET or IGBT  
in the high side configuration that operates off a high  
voltage rail up to 600 volts.  
Typical Connection  
up to 600V  
V CC  
RT  
V B  
HO  
V S  
T O  
L O A D  
CT  
C O M  
LO  
To Order  
CONTROL INTEGRATED CIRCUIT DESIGNERS’ MANUAL  
B-199  
 
 

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