Datasheet > IR21541S

IR21541S

更新时间： 2024-11-09 17:50:07

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动光电二极管接口集成电路驱动器
页数	文件大小	规格书
7页	123K
描述
Half Bridge Based MOSFET Driver, CMOS, PDSO8, SOIC-8

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IR21541S 数据手册

Preliminary Data Sheet No. PD60132I

IR21541

SELF-OSCILLATING HALF-BRIDGE DRIVER

Features

Product Summary

Integrated 600V half-bridge gate driver

15.6V zener clamp on Vcc

True micropower start up

Tighter initial deadtime control

Low temperature coefficient deadtime

•

600V max.

50%

OFFSET

Duty Cycle

T /T

80/40ns

15.6V

r p

Shutdown feature (1/6th Vcc) on C pin

Increased undervoltage lockout Hysteresis (1V)

Lower power level-shifting circuit

clamp

Constant LO, HO pulse widths at startup

Lower di/dt gate driver for better noise immunity

High side output in phase with RT

Deadtime (typ.)

0.6 µs

Excellent latch immunity on all inputs and outputs

ESD protection on all leads

Packages

Description

The IR21541 is an improved version of the popular

IR2152 gate driver IC, and incorporates a high voltage

half-bridge gate driver with a front end oscillator simi-

lar to the industry standard CMOS 555 timer. The

IR21541 provides more functionality and is easier to

use than previous ICs. A shutdown feature has been

8 Lead SOIC

8 Lead PDIP

designed into the C pin, so that both gate driver out-

puts can be disabled using a low voltage control sig-

nal. In addition, the gate driver output pulse widths are

the same once the rising undervoltage lockout thresh-

Typical Connection

old on V

has been reached, resulting in a more

stable profile of frequency vs time at startup. Noise im-

munity has been improved significantly, both by low-

ering the peak di/dt of the gate drivers, and by

increasing the undervoltage lockout hysteresis to 1V.

Finally, special attention has been payed to maximiz-

ing the latch immunity of the device, and providing

comprehensive ESD protection on all pins.

600V

MAX

VCC

Shutdown

COM

12 3 4 5 6 7

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