Datasheet > 驱动程序和接口 > MOSFET 驱动器> IR2153ZPBF

IR2153ZPBF

更新时间： 2024-11-07 13:00:43

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动器 MOSFET驱动器驱动程序和接口接口集成电路光电二极管 PC
页数	文件大小	规格书
9页	218K
描述
Half Bridge Based MOSFET Driver, 0.2A, BICMOS, PDIP8, MO-036AA

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技术参数
数据手册

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IR2153ZPBF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	MO-036AA	Reach Compliance Code：	compliant
风险等级：	5.65	其他特性：	FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT
高边驱动器：	YES	接口集成电路类型：	HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码：	R-PDIP-T8	长度：	10.31 mm
功能数量：	1	端子数量：	8
最高工作温度：	125 °C	最低工作温度：	-55 °C
标称输出峰值电流：	0.2 A	封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP	封装形状：	RECTANGULAR
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	座面最大高度：	4.44 mm
标称供电电压：	12 V	表面贴装：	NO
技术：	BICMOS	温度等级：	MILITARY
端子形式：	THROUGH-HOLE	端子节距：	2.54 mm
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
宽度：	7.62 mm	Base Number Matches：	1

IR2153ZPBF 数据手册

Preliminary Data Sheet No. PD60062 revM

IR2153(D)(S)&(PbF)

SELF-OSCILLATING HALF-BRIDGE DRIVER

Features

Product Summary

Integrated 600V half-bridge gate driver

15.6V zener clamp on Vcc

•

600V max.

50%

OFFSET

True micropower start up

Duty Cycle

Tighter initial deadtime control

Low temperature coefficient deadtime

T /T

r p

80/40ns

15.6V

Shutdown feature (1/6th Vcc) on C pin

Increased undervoltage lockout Hysteresis (1V)

Lower power level-shifting circuit

clamp

Constant LO, HO pulse widths at startup

Lower di/dt gate driver for better noise immunity

Low side output in phase with RT

Deadtime (typ.)

1.2 µs

Packages

Internal 50nsec (typ.) bootstrap diode (IR2153D)

Excellent latch immunity on all inputs and outputs

ESD protection on all leads

Also available LEAD-FREE

Description

The IR2153D(S) are an improved version of the

popular IR2155 and IR2151 gate driver ICs, and incor-

8 Lead SOIC

8 Lead PDIP

porates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS

555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature

has been designed into the C pin, so that both gate driver outputs can be disabled using a low voltage control

signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout

threshold on V

has been reached, resulting in a more stable profile of frequency vs time at startup.

Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by

increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing

the latch immunity of the device, and providing comprehensive ESD protection on all pins.

Typical Connections

IR2153D

IR2153(S)

600V

MAX

600V

MAX

VCC

Shutdown

COM

Shutdown

COM

www.irf.com

12 3 4 5 6 7...9

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与IR2153ZPBF相关器件

型号	品牌	获取价格	描述	数据表
IR2154	INFINEON	获取价格	SELF-OSCILLATING HALF-BRIDGE DRIVER
IR21541	ETC	获取价格
IR21541S	INFINEON	获取价格	Half Bridge Based MOSFET Driver, CMOS, PDSO8, SOIC-8
IR2154S	INFINEON	获取价格	Half Bridge Based MOSFET Driver, 0.4A, BICMOS, PDSO8, SOIC-8
IR2154STR	INFINEON	获取价格	Half Bridge Based MOSFET Driver, 0.4A, BICMOS, PDSO8, SO-8
IR2154STRPBF	INFINEON	获取价格	暂无描述
IR2155	INFINEON	获取价格	SELF-OSCILLATING HALF-BRIDGE DRIVER
IR2155PBF	INFINEON	获取价格	Half Bridge Based MOSFET Driver, 0.5A, CMOS, PDIP8, LEAD FREE, PLASTIC, DIP-8
IR2156	INFINEON	获取价格	BALLAST CONTROL IC
IR2156PBF	INFINEON	获取价格	BALLAST CONTROL IC

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