IR21531D

更新时间： 2024-11-06 21:54:51

品牌	Logo	应用领域
英飞凌 - INFINEON		驱动器 MOSFET驱动器驱动程序和接口接口集成电路光电二极管
页数	文件大小	规格书
9页	131K
描述
SELF-OSCILLATING HALF-BRIDGE DRIVER

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中文翻译

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技术参数
数据手册
替代型号

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IR21531D 技术参数

是否Rohs认证：	不符合	生命周期：	Active
包装说明：	DIP,	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
风险等级：	5.31	高边驱动器：	YES
接口集成电路类型：	HALF BRIDGE BASED MOSFET DRIVER	JESD-30 代码：	R-PDIP-T8
长度：	9.88 mm	功能数量：	1
端子数量：	8	最高工作温度：	125 °C
最低工作温度：	-40 °C	封装主体材料：	PLASTIC/EPOXY
封装代码：	DIP	封装形状：	RECTANGULAR
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	座面最大高度：	5.33 mm
最大供电电压：	16.8 V	最小供电电压：	10 V
标称供电电压：	12 V	表面贴装：	NO
温度等级：	AUTOMOTIVE	端子形式：	THROUGH-HOLE
端子节距：	2.54 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	7.62 mm
Base Number Matches：	1

IR21531D 数据手册

Preliminary Data Sheet No. PD60131-L

IR21531D(S)&(PbF)

SELF-OSCILLATING HALF-BRIDGE DRIVER

Features

Product Summary

Integrated 600V half-bridge gate driver

•

600V max.

50%

OFFSET

15.6V zener clamp on Vcc

True micropower start up

Duty Cycle

T /T

Tighter initial deadtime control

Low temperature coefficient deadtime

80/40ns

15.6V

r p

Shutdown feature (1/6th Vcc) on C pin

Increased undervoltage lockout Hysteresis (1V)

Lower power level-shifting circuit

clamp

Constant LO, HO pulse widths at startup

Lower di/dt gate driver for better noise immunity

Low side output in phase with RT

Deadtime (typ.)

0.6 µs

Packages

Internal 50nsec (typ.) bootstrap diode (IR21531D)

Excellent latch immunity on all inputs and outputs

ESD protection on all leads

Also available LEAD_FREE

Description

The IR21531(D)(S) are an improved version of the

popular IR2155 and IR2151 gate driver ICs, and in-

8 Lead PDIP

8 Lead SOIC

corporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard

CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown

feature has been designed into the C pin, so that both gate driver outputs can be disabled using a low voltage

control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage

lockout threshold on V

has been reached, resulting in a more stable profile of frequency vs time at

startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers,

and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to

maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.

Typical Connections

IR21531(S)

IR21531D

600V

MAX

600V

MAX

VCC

Shutdown

COM

Shutdown

COM

www.irf.com

12 3 4 5 6 7...9

中文翻译

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IR21531D 替代型号

型号	品牌	替代类型	描述	数据表
IR21531DPBF	INFINEON	功能相似	SELF-OSCILLATING HALF-BRIDGE DRIVER

与IR21531D相关器件

型号	品牌	获取价格	描述	数据表
IR21531DPBF	INFINEON	获取价格	SELF-OSCILLATING HALF-BRIDGE DRIVER
IR21531PBF	INFINEON	获取价格	SELF-OSCILLATING HALF-BRIDGE DRIVER
IR21531S	INFINEON	获取价格	SELF-OSCILLATING HALF-BRIDGE DRIVER
IR21531SPBF	INFINEON	获取价格	SELF-OSCILLATING HALF-BRIDGE DRIVER
IR21531STR	INFINEON	获取价格	暂无描述
IR21531STRPBF	INFINEON	获取价格	SELF-OSCILLATING HALF-BRIDGE DRIVER
IR2153D	INFINEON	获取价格	SELF-OSCILLATING HALF-BRIDGE DRIVER
IR2153DPBF	INFINEON	获取价格	SELF-OSCILLATING HALF-BRIDGE DRIVER
IR2153DS	ETC	获取价格	Half Bridge Driver. LO In Phase with RT. Programmable Oscillating Frequency. 1.2us Deadtim
IR2153DSPBF	INFINEON	获取价格	Half Bridge Based MOSFET Driver, CMOS, PDSO8, LEAD FREE, MS-012AA, SOIC-8

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