Datasheet > IR2152S

IR2152S

更新时间： 2024-09-16 23:58:47

品牌	Logo	应用领域
其他 - ETC		驱动器接口集成电路光电二极管信息通信管理
页数	文件大小	规格书
6页	97K
描述
Half Bridge Driver. LO Out of Phase with RT. Programmable Oscillating Frequency. 1.2us Deadtime in a 8-lead SOIC package

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数据手册

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IR2152S 数据手册

Preliminary Data Sheet No. PD60035J

(NOTE: For new designs, we

IR2152

recommend IR’s new products IR2154 and IR21541)

SELF-OSCILLATING HALF-BRIDGE DRIVER

Features

Product Summary

Floating channel designed for bootstrap operation

Fully operational to +600V

Tolerant to negative transient voltage

dV/dt immune

Undervoltage lockout

•

600V max.

50%

OFFSET

Duty Cycle

I +/-

•

100 mA / 210 mA

10 - 20V

Programmable oscillator frequency

OUT

f =

1.4 ×(R_T+ 75Ω)× C_T

Deadtime (typ.)

1.2 µs

Matched propagation delay for both channels

Low side output in phase with R_T

•

Packages

Description

The IR2152 is a high voltage, high speed, self-

oscillating power MOSFET and IGBT driver with both

high and low side referenced output channels. Pro-

prietary HVIC and latch immune CMOS technologies

enable ruggedized monolithic construction. The front

end features a programmable oscillator which is simi-

lar to the 555 timer. The output drivers feature a high

pulse current buffer stage and an internal deadtime

designed for minimum driver cross-conduction. Propa-

gation delays for the two channels are matched to sim-

plify use in 50% duty cycle applications. The floating

channel can be used to drive an N-channel power

MOSFET or IGBT in the high side configuration that

operates off a high voltage rail up to 600 volts.

8 Lead SOIC

8 Lead PDIP

Typical Connection

up to 600V

V_CC

R_T

V_B

V_S

LOAD

C_T

COM

(Refer to Lead Assignment diagram for correct pin configuration)

12 3 4 5 6

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