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IR2151S PDF预览

IR2151S

更新时间: 2024-09-16 23:58:47
品牌 Logo 应用领域
其他 - ETC 驱动器接口集成电路光电二极管
页数 文件大小 规格书
6页 97K
描述
Half Bridge Driver. LO In Phase with RT. Programmable Oscillating Frequency. 1.2us Deadtime in a 8-lead SOIC package

IR2151S 数据手册

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Preliminary Data Sheet No. PD60034-J  
(NOTE: For new designs, we  
IR2151  
recommend IR’s new products IR2153 and IR21531)  
SELF-OSCILLATING HALF-BRIDGE DRIVER  
Features  
Product Summary  
Floating channel designed for bootstrap operation  
Fully operational to +600V  
Tolerant to negative transient voltage  
dV/dt immune  
Undervoltage lockout  
Programmable oscillator frequency  
V
600V max.  
50%  
OFFSET  
Duty Cycle  
I +/-  
100 mA / 210 mA  
10 - 20V  
O
1
V
OUT  
f =  
1.4 ×(RT + 75)× CT  
Deadtime (typ.)  
1.2 µs  
Matched propagation delay for both channels  
Low side output in phase with RT  
Packages  
Description  
The IR2151 is a high voltage, high speed, self-os-  
cillating power MOSFET and IGBT driver with both  
high and low side referenced output channels. Pro-  
prietary HVIC and latch immune CMOS technologies  
enable ruggedized monolithic construction. The front  
end features a programmable oscillator which is simi-  
lar to the 555 timer. The output drivers feature a high  
pulse current buffer stage and an internal deadtime  
designed for minimum driver cross-conduction. Propa-  
gation delays for the two channels are matched to sim-  
plify use in 50% duty cycle applications. The floating  
channel can be used to drive an N-channel power  
MOSFET or IGBT in the high side configuration that  
operates off a high voltage rail up to 600 volts.  
8 Lead PDIP  
8 Lead SOIC  
Typical Connection  
up to 600V  
VCC  
RT  
VB  
HO  
VS  
TO  
LOAD  
CT  
COM  
LO  
(Refer to Lead Assignment diagram for correct pin configuration)  
1

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