Datasheet > IR21271STR

IR21271STR

更新时间： 2024-10-15 17:15:31

品牌	Logo	应用领域
友台半导体 - UMW		栅极驱动
页数	文件大小	规格书
11页	884K
描述
栅极驱动IC

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IR21271STR 数据手册

UMW

IR21271

300V Current Sensing Single Channel MOSFET/IGBT Driver

Description

Application



Motor control and drive

Robot technology

UMW IR21271STR is a high voltage, high speed power

MOSFET and IGBT driver. Proprietary HVIC and latch immune

Fast charging of electric vehicles

CMOS

technologies

enable

ruggedized monolithic

construction. The logic input is compatible with standard

CMOS or LSTTL outputs,down to 3.3V. The protection

circuity detects over-current in the driven power transistor

and terminates the gate drive voltage. An open drain FAULT

signal is provided to indicate that an over-current shutdown

has occurred. The output driver features a high pulse current

buffer stage designed for minimum cross-conduction.The

floating channel can be used to drive an N-channel power

MOSFET or IGBT in the high side or low side configuration

which operates up to 300 volts.

Features and Benefits



Floating channel designed for bootstrap

operation



Fully operational to +300 V

3.3V, 5V and 15V input logic compatible

dV/dt noise Immunity ±50 V/nsec

Allowable negative Vs capability: -5V

Output in phase with input

Functional Block Diagram

Gate drive supply range from 8V to 22V

Undervoltage lockout for both channels

--UVLO 6.8V/7.2V



Propagation delay

--Ton/Toff =150ns/150ns



Wide operating temperature range -40°C ~125°C

Fault lead indicates shutdown has occurred

RoSH compatible

SOIC8(S)

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...11

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