Datasheet > IR2110STR

IR2110STR

更新时间： 2024-10-15 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		栅极驱动
页数	文件大小	规格书
9页	1062K
描述
栅极驱动IC

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IR2110STR 数据手册

UMW

IRS2110

700V 4A Half Bridge MOSFET/IGBT Gate Driver

Description

Application

The UMW IRS2110STR is a high voltage, high

speed power MOSFET drivers with dependent high-

and low-side referenced output channels.

Proprietary HVIC and latch immune CMOS



UPS Universal inverter

Half-bridge and full-bridge converters in AC and

DC power supplies

technologies enable ruggedized monolithic construction.

The logic input is compatible with standard CMOS

or LSTTL output, down to 3.3 V logic. The output

drivers feature a high pulse current buffer stage

designed for minimum driver cross-conduction. The

floating channel can be used to drive an N-channel

power MOSFET in the high-side configuration which

operates up to 700 V.



High-density switching power supplies for

servers, telecommunications, IT and industrial

infrastructure

Solar inverter and motor driver

Functional Block Diagram

Features and Benefits



Floating channel designed for bootstrap

operation



Fully operational to +700 V

3.3V, 5V and 15V input logic compatible

Tolerant to negative transient voltage

dV/dt immune



Allowable negative Vs capability: -9V

Gate drive supply range from 10V to 20V

Separate logic supply range from 3.3V to 20V

Logic and power ground ±5V offset

Undervoltage lockout for both channels

Cycle by cycle edge-triggered shutdown logic

Matched propagation delay for both channels

Wide operating temperature range -40°C ~125°C

Typically output Source/Sink current capability:

4A/4A



www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...9

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