Datasheet > IQE220N15NM5CGSC

IQE220N15NM5CGSC

更新时间： 2024-11-25 17:15:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1304K
描述
The IQE220N15NM5CGSC is part of the Source-Down family with an RDS(on) of 22 mOhm. The Source-Down technology introduces a flipped silicon die, offering increased thermal capability, improved power density and layout possibilities.

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IQE220N15NM5CGSC 数据手册

IQE220N15NM5CGSC

MOSFET

OptiMOS^TMꢀ5ꢀPower-Transistor,ꢀ150ꢀV

PG-WHTFN-9

Features

•ꢀN-channel,ꢀnormalꢀlevel

•ꢀSuperiorꢀthermalꢀresistance

•ꢀ100%ꢀavalancheꢀtested

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsynchronousꢀrectification

Pin 1

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Drain

Pin 5-8

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Gate

Pin 9

Parameter

Value

150

Unit

V_DS

Source

Pin 1-4

R_DS(on),max

I_D

mΩ

*1: Internal body diode

Q_oss

Q_G

14.4

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IQE220N15NM5CGSC

PG-WHTFN-9

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2023-03-21

12 3 4 5 6 7...11

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