Datasheet > IQE022N06LM5SC

IQE022N06LM5SC

更新时间： 2023-09-03 20:32:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1397K
描述
IQE022N06LM5SC is Infineon’s new best-in-class OptiMOS™ 5 power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down dual-side cooling (DSC) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C and superior thermal performance. The OptiMOS™ Source-Down is a revolutionary design with a flipped silicon die inside, which offers several advantages, such as increased thermal capability, advanced power density and improved layout possibilities. Combined with the innovative dual-side cooling package, which can dissipate up to three times more power than the traditional overmolded package, IQE022N06LM5SC is targeted for high power density and performance SMPS products commonly found in telecom and data servers.

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IQE022N06LM5SC 数据手册

IQE022N06LM5SC

MOSFET

OptiMOS^TMꢀ5ꢀPower-Transistor,ꢀ60ꢀV

PG-WHSON-8

Features

•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsynchronousꢀrectification

•ꢀN-channel,ꢀlogicꢀlevel

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)

•ꢀSuperiorꢀthermalꢀresistance

•ꢀ100%ꢀavalancheꢀtested

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Drain

Pin 5-8

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Gate

Pin 4

Parameter

Value

Unit

Source

Pin 1-3

V_DS

*1: Internal body diode

R_DS(on),max@10V

R_DS(on),max@4.5V

I_D

2.2

2.9

151

mΩ

Q_oss

Q_Gꢀ(0V...4.5V)

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IQE022N06LM5SC

PG-WHSON-8

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2023-01-12

12 3 4 5 6 7...11

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