Datasheet > IQE022N06LM5CG

IQE022N06LM5CG

更新时间： 2023-09-03 20:35:31

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
11页	1153K
描述
IQE022N06LM5CG is Infineon’s new best-in-class OptiMOS™ 5 Power MOSFET 60 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate (CG) package, offering the industry’s lowest on-state resistance RDS(on) at 25˚C, superior thermal performance, and optimized parallelization. The OptiMOS™ Source-Down is a revolutionary technology with a flipped silicon die inside, offering several advantages such as better thermal capability, higher power density and improved layout possibilities. Combined with the new PQFN 3.3x3.3 Center-Gate package, IQE022N06LM5CG is targeted for high power density and performance SMPS products commonly found in telecom and data servers.

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IQE022N06LM5CG 数据手册

IQE022N06LM5CG

MOSFET

OptiMOS^TMꢀ5ꢀPower-Transistor,ꢀ60ꢀV

PG-TTFN-9

Features

•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsynchronousꢀrectification

•ꢀN-channel,ꢀlogicꢀlevel

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)

•ꢀSuperiorꢀthermalꢀresistance

•ꢀ100%ꢀavalancheꢀtested

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Drain

Pin 5-8

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Gate

Pin 9

Parameter

Value

Unit

Source

Pin 1-4

V_DS

R_DS(on),max@10V

R_DS(on),max@4.5V

I_D

2.2

2.9

151

mΩ

Q_oss

Q_Gꢀ(0V...4.5V)

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IQE022N06LM5CG

PG-TTFN-9

022N6C5

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2023-01-12

12 3 4 5 6 7...11

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