Datasheet > IQDH29NE2LM5CG

IQDH29NE2LM5CG

更新时间： 2024-04-09 19:00:01

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	1110K
描述
The power MOSFET IQDH29NE2LM5CG 25 V comes in a PQFN 5x6 mm2 Source-Down package. The part offers

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IQDH29NE2LM5CG 数据手册

IQDH29NE2LM5CG

MOSFET

OptiMOS^TMꢀ5ꢀPower-Transistor,ꢀ25ꢀV

PG-TTFN-9

Features

•ꢀN-channel,ꢀlogicꢀlevel

•ꢀVeryꢀlowꢀon-resistanceꢀR_DS(on)

•ꢀSuperiorꢀthermalꢀresistance

•ꢀ100%ꢀavalancheꢀtested

•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant

•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21

Productꢀvalidation

FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications

Drain

Pin 5-8

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

Value

Unit

Gate

Pin 9

V_DS

Source

Pin 1-4

R_DS(on),max

I_D

0.29

789

127

mΩ

Q_oss

Q_G

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IQDH29NE2LM5CG

PG-TTFN-9

H29E2LC

Final Data Sheet

Rev.ꢀ2.1,ꢀꢀ2023-03-29

12 3 4 5 6 7...11

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