5秒后页面跳转
IPW65R041CFD7 PDF预览

IPW65R041CFD7

更新时间: 2023-09-03 20:36:09
品牌 Logo 应用领域
英飞凌 - INFINEON 电站服务器电信
页数 文件大小 规格书
14页 1387K
描述
英飞凌 650V CoolMOS™ CFD7 超结 MOSFET IPW65R029CFD7 采用 TO-247 封装,尤为适用于诸如服务器、电信、太阳能和电动汽车充电站等工业应用中的谐振拓扑结构。相较于竞品,该产品可显著提高效率。

IPW65R041CFD7 数据手册

 浏览型号IPW65R041CFD7的Datasheet PDF文件第2页浏览型号IPW65R041CFD7的Datasheet PDF文件第3页浏览型号IPW65R041CFD7的Datasheet PDF文件第4页浏览型号IPW65R041CFD7的Datasheet PDF文件第5页浏览型号IPW65R041CFD7的Datasheet PDF文件第6页浏览型号IPW65R041CFD7的Datasheet PDF文件第7页 
IPW65R041CFD7  
MOSFET  
PG-TOꢀ247-3  
650VꢀCoolMOSªꢀCFD7ꢀSJꢀPowerꢀDevice  
Theꢀlatestꢀ650ꢀVꢀCoolMOS™ꢀCFD7ꢀextendsꢀtheꢀvoltageꢀclassꢀofferingꢀof  
theꢀCFD7ꢀfamilyꢀandꢀisꢀaꢀsuccessorꢀtoꢀtheꢀ650ꢀVꢀCoolMOS™ꢀCFD2.  
Resultingꢀfromꢀimprovedꢀswitchingꢀperformanceꢀandꢀexcellentꢀthermal  
behavior,ꢀ650ꢀVꢀCooMOS™ꢀCFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonant  
switchingꢀtopologies,ꢀsuchꢀasꢀLLCꢀandꢀphase-shift-full-bridgeꢀ(ZVS).ꢀAs  
partꢀofꢀInfineon’sꢀfastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblends  
allꢀadvantagesꢀofꢀaꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhard  
commutationꢀrobustness.ꢀTheꢀCoolMOS™ꢀCFD7ꢀtechnologyꢀmeets  
highestꢀefficiencyꢀandꢀreliabilityꢀstandardsꢀandꢀfurthermoreꢀsupportsꢀhigh  
powerꢀdensityꢀsolutions.  
Tab  
1
2
3
Features  
•ꢀUltra-fastꢀbodyꢀdiode  
Drain  
Pin 2  
•ꢀ650Vꢀbreakꢀdownꢀvoltage  
•ꢀBest-in-classꢀRDS(on)  
•ꢀReducedꢀswitchingꢀlosses  
•ꢀLowꢀRDS(on)ꢀdependencyꢀoverꢀtemperature  
*1  
Gate  
Pin 1  
Source  
Pin 3  
*1: Internal body diode  
Benefits  
•ꢀExcellentꢀhardꢀcommutationꢀruggedness  
•ꢀExtraꢀsafetyꢀmarginꢀforꢀdesignsꢀwithꢀincreasedꢀbusꢀvoltage  
•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions  
•ꢀOutstandingꢀlightꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications  
•ꢀImprovedꢀfullꢀloadꢀefficiencyꢀinꢀindustrialꢀSMPSꢀapplications  
•ꢀPriceꢀcompetitivenessꢀoverꢀpreviousꢀCoolMOS™ꢀfamilies  
Potentialꢀapplications  
SuitableꢀforꢀSoftꢀSwitchingꢀtopologies  
Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,  
Telecom,ꢀEVꢀCharging,ꢀSolar  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj,max  
RDS(on),max  
Value  
Unit  
700  
V
41  
m  
nC  
A
Qg,typ  
102  
ID,pulse  
211  
Eoss @ 400V  
Body diode diF/dt  
14.0  
1300  
µJ  
A/µs  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPW65R041CFD7  
PG-TO247-3  
65R041F7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2020-08-12  

与IPW65R041CFD7相关器件

型号 品牌 获取价格 描述 数据表
IPW65R045C7 INFINEON

获取价格

650V CoolMOS™ C7 Power Transistor
IPW65R048CFDA INFINEON

获取价格

Metal Oxide Semiconductor Field Effect Transistor
IPW65R048CFDAFKSA1 INFINEON

获取价格

650V CoolMOS CFDA Power Transistor
IPW65R050CFD7A INFINEON

获取价格

TO-247 引脚封装中的 50mOhm IPW65R050CFD7A 是汽车级认证 65
IPW65R060CFD7 INFINEON

获取价格

英飞凌 650V CoolMOS™ CFD7 超结 MOSFET IPW65R029CFD
IPW65R065C7 INFINEON

获取价格

英飞凌的 CoolMOS™ C7 超结 MOSFET 系列是技术的一次突破性进步,在全球范
IPW65R070C6 INFINEON

获取价格

650V CoolMOS C6 Power Transistor
IPW65R075CFD7A INFINEON

获取价格

TO-247 引脚封装中的 75mOhm IPW65R075CFD7A是汽车级认证 650
IPW65R080CFD INFINEON

获取价格

650V CoolMOS CFD Power Transistor
IPW65R080CFDA INFINEON

获取价格

Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, M