Datasheet > IPW60R125CFD7

IPW60R125CFD7

更新时间： 2024-11-03 14:54:15

品牌	Logo	应用领域
英飞凌 - INFINEON		栅高压二极管栅极
页数	文件大小	规格书
14页	1329K
描述
600V CoolMOS? CFD7 是英飞凌最新具有集成快速体二极管的高压 superjunction MOSFET 技术，补全了 CoolMOS? 7 系列。该 CoolMOS? CFD7 拥有更低的栅极电荷(Qg)和更好的关断性能。此外，其反向恢复电荷(Qrr)比市场上的竞争性产品低 69% 之多，且具有市场上最短的反向恢复时间(trr)。

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IPW60R125CFD7 数据手册

IPW60R125CFD7

MOSFET

PG-TOꢀ247-3

600VꢀCoolMOSªꢀCFD7ꢀPowerꢀTransistor

CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower

MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand

pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀlatestꢀCoolMOS™ꢀCFD7ꢀisꢀthe

successorꢀtoꢀtheꢀCoolMOS™ꢀCFD2ꢀseriesꢀandꢀisꢀanꢀoptimizedꢀplatform

tailoredꢀtoꢀtargetꢀsoftꢀswitchingꢀapplicationsꢀsuchꢀasꢀphase-shiftꢀfull-bridge

(ZVS)ꢀandꢀLLC.ꢀResultingꢀfromꢀreducedꢀgateꢀchargeꢀ(Q_g),ꢀbest-in-class

reverseꢀrecoveryꢀchargeꢀ(Q_rr)ꢀandꢀimprovedꢀturnꢀoffꢀbehaviorꢀCoolMOS™

CFD7ꢀoffersꢀhighestꢀefficiencyꢀinꢀresonantꢀtopologies.ꢀAsꢀpartꢀofꢀInfineon’s

fastꢀbodyꢀdiodeꢀportfolio,ꢀthisꢀnewꢀproductꢀseriesꢀblendsꢀallꢀadvantagesꢀof

aꢀfastꢀswitchingꢀtechnologyꢀtogetherꢀwithꢀsuperiorꢀhardꢀcommutation

robustness,ꢀwithoutꢀsacrificingꢀeasyꢀimplementationꢀinꢀtheꢀdesign-in

process.ꢀTheꢀCoolMOS™ꢀCFD7ꢀtechnologyꢀmeetsꢀhighestꢀefficiencyꢀand

reliabilityꢀstandardsꢀandꢀfurthermoreꢀsupportsꢀhighꢀpowerꢀdensity

solutions.ꢀAltogether,ꢀCoolMOS™ꢀCFD7ꢀmakesꢀresonantꢀswitching

topologiesꢀmoreꢀefficient,ꢀmoreꢀreliable,ꢀlighterꢀandꢀcooler.

Drain

Pin 2

Gate

Pin 1

Features

•ꢀUltra-fastꢀbodyꢀdiode

Source

Pin 3

•ꢀLowꢀgateꢀcharge

•ꢀBest-in-classꢀreverseꢀrecoveryꢀchargeꢀ(Q_rr)

•ꢀImprovedꢀMOSFETꢀreverseꢀdiodeꢀdv/dtꢀandꢀdi_F/dtꢀruggedness

•ꢀLowestꢀFOMꢀR_DS(on)*Q_gꢀandꢀR_DS(on)*E_oss

•ꢀBest-in-classꢀR_DS(on)ꢀinꢀSMDꢀandꢀTHDꢀpackages

Benefits

•ꢀExcellentꢀhardꢀcommutationꢀruggedness

•ꢀHighestꢀreliabilityꢀforꢀresonantꢀtopologies

•ꢀHighestꢀefficiencyꢀwithꢀoutstandingꢀease-of-useꢀ/ꢀperformanceꢀtradeoff

•ꢀEnablingꢀincreasedꢀpowerꢀdensityꢀsolutions

Potentialꢀapplications

SuiteableꢀforꢀSoftꢀSwitchingꢀtopologies

Optimizedꢀforꢀphase-shiftꢀfull-bridgeꢀ(ZVS),ꢀLLCꢀApplicationsꢀ–ꢀServer,

Telecom,ꢀEVꢀCharging

ProductꢀValidation:ꢀQualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀthe

relevantꢀtestsꢀofꢀJEDEC47/20/22

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j,max

R_DS(on),max

Value

650

125

Unit

mΩ

Q_g,typ

I_D,pulse

E_oss@ 400V

Body diode di_F/dt

4.1

µJ

1300

A/µs

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPW60R125CFD7

PG-TO 247-3

60R125F7

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2018-02-15

12 3 4 5 6 7...14

中文翻译

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与IPW60R125CFD7相关器件

型号	品牌	获取价格	描述	数据表
IPW60R125CP	INFINEON	获取价格	CoolMOS Power Transistor
IPW60R125CP_08	INFINEON	获取价格	CoolMOS Power Transistor
IPW60R125P6	INFINEON	获取价格	Metal Oxide Semiconductor Field Effect Transistor
IPW60R145CFD7	INFINEON	获取价格	600V CoolMOS™ CFD7 是英飞凌最新具有集成快速体二极管的高压 superj
IPW60R160C6	INFINEON	获取价格	Metal Oxide Semiconductor Field Effect Transistor
IPW60R160P6	INFINEON	获取价格	Metal Oxide Semiconductor Field Effect Transistor
IPW60R160P6_15	INFINEON	获取价格	Metal Oxide Semiconductor Field Effect Transistor
IPW60R165CP	INFINEON	获取价格	CoolMOS Power Transistor
IPW60R165CP_08	INFINEON	获取价格	CoolMOS® Power Transistor Features Lowest fig
IPW60R165CPFKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Me

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