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IPTG029N13NM6 PDF预览

IPTG029N13NM6

更新时间: 2024-11-18 17:15:39
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 1249K
描述
OptiMOS? 6?135 V targets high-power motor-drive applications such as LEVs, e-forklifts, power and gardening tools, but also UPS applications which predominantly use 72-84 V batteries.

IPTG029N13NM6 数据手册

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IPTG029N13NM6  
MOSFET  
OptiMOSTMꢀ6ꢀPower-Transistor,ꢀ135ꢀV  
PG-HSOG-8  
TAB  
Features  
TAB  
•ꢀN-channel,ꢀnormalꢀlevel  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
1
8
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)  
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)  
•ꢀ100%ꢀavalancheꢀtested  
8
1
•ꢀ175°Cꢀoperatingꢀtemperature  
•ꢀOptimizedꢀforꢀmotorꢀdrivesꢀandꢀbatteryꢀpoweredꢀapplications  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
•ꢀMSLꢀ1ꢀclassifiedꢀaccordingꢀtoꢀJ-STD-020  
Drain  
TAB  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Gate  
Pin 1  
Source  
Pin 2-8  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
135  
2.9  
Unit  
VDS  
V
RDS(on),max  
ID  
m  
A
212  
180  
104  
118  
Qoss  
nC  
nC  
nC  
QGꢀ(0V..10V)  
Qrrꢀ(500ꢀA/µs)  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPTG029N13NM6  
PG-HSOG-8  
029N13N6  
-
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2023-10-16  

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