Datasheet > IPT2006-BEB

IPT2006-BEB

更新时间： 2022-12-23 01:39:01

品牌	Logo	应用领域
IPS		/
页数	文件大小	规格书
4页	207K
描述
High current density due to double mesa technology

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IPT2006-BEB 数据手册

IP Semiconductor Co., Ltd.

IPT2006-xxB

High current density due to double mesa technology;

SIPOS and Glass Passivation. IPT2006-xx series are

suitable for general purpose AC Switching.

They can be used as an ON/OFF function In application

such as static relays, heating regulation, Induction

motor stating circuits… or for phase Control operation

light dimmers, motor speed Controllers.

IPT2006-xxB series is 3 Quadrants triacs, This is specially

recommended for use on inductive Loads..

MAIN FEATURES

Symbol

Value

Unit

TO-220B

IT(RMS)

VDRM / VRRM

VTM

600

≤ 1.65

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage Junction Temperature Range

Operating Junction Temperature Range

Tstg

-40 to +150

-40 to +125

℃

Repetitive Peak Off-state Voltage

Repetitive Peak Reverse Voltage

Tj = 25℃

Tc = 70℃

VDRM

VRRM

600

Non Repetitive Peak Off-state Voltage

Non Repetitive Peak Reverse Voltage

VDSM

VRSM

700

RMS on–state current

IT(RMS)

(360º conduction angle )

Non repetitive surge peak on–state Current

(full cycle, Tj = 25℃)

t = 8.3ms

t = 10ms

210

200

ITSM

I²t

200

A²s

A/us

I²t Value for fusing

tp = 10ms

Critical Rate of rise of on-state current

Gate supply : IG = 500mA dIG/dt = 1A/us

Repetitive F = 50Hz

Non repetitive

dI / dt

100

IGM

Peak gate current

tp = 20us, Tj = 125 ℃

Tj = 125 ℃

Average gate power dissipation

PG(AV)

4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea

TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com

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