Datasheet > IPT1206-CEF

IPT1206-CEF

更新时间： 2022-12-23 01:39:00

品牌	Logo	应用领域
IPS		/
页数	文件大小	规格书
4页	221K
描述
High current density due to double mesa technology

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IPT1206-CEF 数据手册

IP Semiconductor Co., Ltd.

IPT1206-xxF

High current density due to double mesa technology; SIPOS

and Glass Passivation. IPT1206-xx series are suitable for

general purpose AC Switching. They can be used as an

ON/OFF function In application such as static relays,

heating regulation, Induction motor stating circuits… or

for phase Control operation light dimmers, motor speed

Controllers.

The IPT1206-xxF(Insulated version) series are isolated

internally, they provided a 2500V RMS isolation voltage from

all three terminals to external heatsink..

MAIN FEATURES

Symbol

IT(RMS)

Value

Unit

VDRM / VRRM

VTM

600

≤ 1.55

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage Junction Temperature Range

Operating Junction Temperature Range

Tstg

-40 to +150

-40 to +125

℃

Repetitive Peak Off-state Voltage

Repetitive Peak Reverse Voltage

Tj = 25℃

VDRM

VRRM

600

Non Repetitive Peak Off-state Voltage

Non Repetitive Peak Reverse Voltage

Tj = 25℃

VDSM

VRSM

700

RMS on–state current

Tc = 79 ℃

IT(RMS)

(Full sine wave)

Non repetitive surge peak on–state Current f = 60Hz t = 16.7ms

126

120

ITSM

(full cycle, Tj = 25℃)

f = 50 Hz t = 20ms

I²t

A²s

A/us

I²t Value for fusing

tp = 10ms

Critical Rate of rise of on-state current

dI / dt

IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃

IGM

Peak gate current

tp = 20us, Tj = 125 ℃

Tj = 125 ℃

Average gate power dissipation

PG(AV)

4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea

TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com

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