Datasheet > IPT08Q06-CEB

IPT08Q06-CEB

更新时间： 2022-12-20 00:57:26

品牌	Logo	应用领域
IPS		/
页数	文件大小	规格书
4页	212K
描述
High current density due to double mesa technology

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IPT08Q06-CEB 数据手册

IP Semiconductor Co., Ltd.

IPT08Q06-xxB

High current density due to double mesa technology;

SIPOS and Glass Passivation. IPT08Q06-xx series are

suitable for general purpose AC Switching.

They can be used as an ON/OFF function In application

such as static relays, heating regulation, Induction

motor stating circuits… or for phase Control operation

light dimmers, motor speed Controllers.

MAIN FEATURES

Symbol

IT(RMS)

Value

Unit

TO-220B

VDRM / VRRM

VTM

600

≤ 1.55

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage Junction Temperature Range

Operating Junction Temperature Range

Tstg

-40 to +150

-40 to +125

℃

Repetitive Peak Off-state Voltage

Repetitive Peak Reverse Voltage

Tj = 25℃

Tc =95℃

VDRM

VRRM

600

Non Repetitive Peak Off-state Voltage

Non Repetitive Peak Reverse Voltage

VDSM

VRSM

700

RMS on–state current

IT(RMS)

(Full sine wave)

Non repetitive surge peak on–state Current f = 60Hz t = 16.7ms

ITSM

(full cycle, Tj = 25℃)

f = 50 Hz t = 20ms

I²t

A²s

A/us

I²t Value for fusing

tp = 10ms

Critical Rate of rise of on-state current

dI / dt

IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃

IGM

Peak gate current

tp = 20us, Tj = 125 ℃

Tj = 125 ℃

Average gate power dissipation

PG(AV)

4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea

TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com

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