Datasheet > IPT04Q08-TED

IPT04Q08-TED

更新时间： 2022-11-09 15:14:42

品牌	Logo	应用领域
IPS		/
页数	文件大小	规格书
5页	211K
描述
High current density due to double mesa technology

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IPT04Q08-TED 数据手册

IP Semiconductor Co., Ltd.

IPT04Q08-xxD

High current density due to double mesa technology;

SIPOS and Glass Passivation. IPT04Q08-xx series are

suitable for general purpose AC Switching.

They can be used as an ON/OFF function In application

such as static relays, heating regulation, Induction

motor stating circuits… or for phase Control operation

light dimmers, motor speed Controllers.

DPAK(TO-252)

MAIN FEATURES

Symbol

IT(RMS)

Value

Unit

VDRM / VRRM

IGT

800

5 to 25

ABSOLUTE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Storage Junction Temperature Range

Operating Junction Temperature Range

Tstg

-40 to +150

-40 to +125

℃

Repetitive Peak Off-state Voltage

Repetitive Peak Reverse Voltage

Tj = 25℃

VDRM

VRRM

800

Non Repetitive Peak Off-state Voltage

Non Repetitive Peak Reverse Voltage

Tj = 25℃

VDSM

VRSM

900

RMS on–state current

Tc =105℃

IT(RMS)

(Full sine wave)

Non repetitive surge peak on–state Current f = 60Hz t = 16.7ms

ITSM

(full cycle, Tj = 25℃)

f = 50 Hz t = 20ms

I²t

A²s

A/us

I²t Value for fusing

tp = 10ms

Critical Rate of rise of on-state current

dI / dt

IG = 2xIGT, tr ≤ 100ns, f = 120Hz, Tj = 125 ℃

IGM

Peak gate current

tp = 20us, Tj = 125 ℃

Tj = 125 ℃

Average gate power dissipation

PG(AV)

4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea

TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com

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