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IPT029N08N5 PDF预览

IPT029N08N5

更新时间: 2024-09-16 14:56:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 1033K
描述
OptiMOS? 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS? 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS? 5 80 V has an RDS(on) reduction of up to 43%.

IPT029N08N5 数据手册

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IPT029N08N5  
MOSFET  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
HSOF  
Features  
Tab  
•ꢀIdealꢀforꢀhighꢀfrequencyꢀswitchingꢀandꢀsync.ꢀrec.  
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)  
•ꢀVeryꢀlowꢀon-resistanceꢀꢀRDS(on)  
1
•ꢀN-channel,ꢀnormalꢀlevel  
2
3
4
5
•ꢀ100%ꢀavalancheꢀtested  
6
7
8
•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
Drain  
Tab  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
VDS  
80  
V
Gate  
Pin 1  
RDS(on),max  
ID  
2.9  
169  
83  
m  
A
Source  
Pin 2-8  
Qoss  
nC  
nC  
QG(0V..10V)  
70  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPT029N08N5  
PG-HSOF-8  
029N08N5  
-
1) J-STD20 and JESD22  
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2016-01-22  

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