IP Semiconductor Co., Ltd.
IPS620-xxB
IPS620 series of silicon controlled rectifiers are
specifically designed for medium power switching and
phase control applications.
High current density due to double mesa technology
SIPOS and Glass passivation technology used has
reliable operation up to 125℃ junction temperature.
Low Igt parts available.
IPS620 series are suitable for general purpose
applications, a high gate sensitivity is required.
MAIN FEATURES
Symbol
Value
Unit
A
IT(RMS)
20
IT(AV)
12
A
TO-220B
VDRM / VRRM
VTM
600
V
≤ 1.6
V
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
RMS on–state current (Tc = 100℃, 180º conduction half sine wave)
IT(RMS)
20
A
Average on–state current
IT(AV)
12
A
℃
V
(Tc = 100℃, 180º conduction half sine wave)
Storage Junction Temperature Range
Operating Junction Temperature Range
Tstg
Tj
-40 to +150
-40 to +125
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
VDRM
VRRM
600
600
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
VDSM
VRSM
700
700
V
One cycle Non Repetitive surge current ( Half Cycle, 50Hz)
ITSM
I²t
200
200
50
5
A
A²s
A/us
A
I²t Value for fusing
(tp = 10ms, Half Cycle)
Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃)
dI/dt
IGM
Peak gate current
tp = 20us, Tj = 125℃
Tj = 125℃
Average gate power dissipation
PG(AV)
1
W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
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