IPS022G

更新时间： 2024-01-22 12:39:53

品牌	Logo	应用领域
英飞凌 - INFINEON		外围驱动器驱动程序和接口开关接口集成电路光电二极管
页数	文件大小	规格书
10页	96K
描述
DUAL FULLY PROTECTED POWER MOSFET SWITCH

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技术参数
数据手册

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IPS022G 技术参数

生命周期：	Transferred	零件包装代码：	SOIC
包装说明：	SOP,	针数：	8
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.44
内置保护：	TRANSIENT; OVER CURRENT; THERMAL	接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码：	R-PDSO-G8	长度：	4.89 mm
功能数量：	1	端子数量：	8
输出电流流向：	SINK	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	认证状态：	Not Qualified
座面最大高度：	1.75 mm	表面贴装：	YES
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	宽度：	3.9 mm
Base Number Matches：	1

IPS022G 数据手册

Data Sheet No.PD60203

IPS022G

DUAL FULLY PROTECTED POWER MOSFET SWITCH

Features

• Over temperature shutdown

• Over current shutdown

• Active clamp

• Low current & logic level input

• E.S.D protection

Product Summary

150mΩ (max)

ds(on)

50V

clamp

shutdown

Description

T T

1.5µs

on/ off

The IPS022G are fully protected dual low side SMART

POWER MOSFETs respectively. They feature over-

current, over-temperature, ESD protection and drain

to source active clamp.These devices combine a

Package

HEXFET POWER MOSFET and a gate driver. They

offer full protection and high reliability required in

harsh environments. The driver allows short switch-

ing times and provides efficient protection by turning

OFF the power MOSFET when the temperature ex-

ceeds 165^oC or when the drain current reaches 5A.

These devices restart once the input is cycled. The

avalanche capability is significantly enhanced by

the active clamp and covers most inductive load

demagnetizations.

8-Lead SOIC

IPS022G

(Dual)

Typical Connection

Load

R in series

(if needed)

control

Logic signal

(Refer to lead assignment for correct pin configuration)

www.irf.com

12 3 4 5 6 7...10

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