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IPS021STRRPBF PDF预览

IPS021STRRPBF

更新时间: 2024-01-09 23:07:12
品牌 Logo 应用领域
英飞凌 - INFINEON 开关
页数 文件大小 规格书
11页 145K
描述
Analog Circuit, 1 Func, PSSO2, SMD-220, D2PAK-3

IPS021STRRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:TO-263,针数:4
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:5.56模拟集成电路 - 其他类型:ANALOG CIRCUIT
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
长度:10.415 mm湿度敏感等级:1
功能数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TO-263
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:4.69 mm最大供电电压 (Vsup):40 V
标称供电电压 (Vsup):14 V表面贴装:YES
温度等级:AUTOMOTIVE端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子节距:2.54 mm
端子位置:SINGLE处于峰值回流温度下的最长时间:30
宽度:8.79 mmBase Number Matches:1

IPS021STRRPBF 数据手册

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Data Sheet No.PD 60148-K  
( )  
IPS021 S  
FULLY PROTECTED POWER MOSFET SWITCH  
Features  
Product Summary  
Over temperature shutdown  
Over current shutdown  
Active clamp  
Low current & logic level input  
E.S.D protection  
R
V
150m(max)  
ds(on)  
50V  
5A  
clamp  
I
shutdown  
Description  
T T  
1.5µs  
on/ off  
The IPS021/IPS021S are fully protected three terminal  
SMART POWER MOSFETs that feature over-current,  
over-temperature, ESD protection and drain to source  
®
active clamp.These devices combine a HEXFET  
Packages  
POWER MOSFET and a gate driver. They offer full  
protection and high reliability required in harsh envi-  
ronments. The driver allows short switching times  
and provides efficient protection by turning OFF the  
power MOSFET when the temperature exceeds 165oC  
or when the drain current reaches 5A. These devices  
restart once the input is cycled. The avalanche capa-  
bility is significantly enhanced by the active clamp  
and covers most inductive load demagnetizations.  
3-Lead D2Pak  
IPS021S  
3-Lead TO-220  
IPS021  
Typical Connection  
Load  
R in series  
(if needed)  
D
S
IN  
control  
ƒ

Logic signal  
(Refer to lead assignment for correct pin configuration)  
www.irf.com  
1

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