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IPS0151S PDF预览

IPS0151S

更新时间: 2024-01-11 03:08:04
品牌 Logo 应用领域
英飞凌 - INFINEON 开关
页数 文件大小 规格书
12页 164K
描述
FULLY PROTECTED POWER MOSFET SWITCH

IPS0151S 数据手册

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Data Sheet No.PD60144-K  
( )  
IPS0151 S  
FULLY PROTECTED POWER MOSFET SWITCH  
Features  
Product Summary  
Over temperature shutdown  
Over current shutdown  
Active clamp  
Low current & logic level input  
E.S.D protection  
R
V
25m(max)  
ds(on)  
50V  
35A  
clamp  
Ishutdown  
Description  
T T  
1.5µs  
on/ off  
The IPS0151/IPS0151S are fully protected three terminal  
SMART POWER MOSFETs that feature over-current,  
over-temperature, ESD protection and drain to source  
active clamp.These devices combine a HEXFET®  
POWER MOSFET and a gate driver. They offer full  
protection and high reliability required in harsh envi-  
ronments. The driver allows short switching times  
and provides efficient protection by turning OFF the  
power MOSFET when the temperature exceeds 165oC  
or when the drain current reaches 35A. The device  
restarts once the input is cycled. The avalanche  
capability is significantly enhanced by the active  
clamp and covers most inductive load demagnetiza-  
tions.  
Packages  
3-Lead D2Pak  
IPS0151S  
3-Lead TO-220  
PS0151  
Typical Connection  
Load  
D
S
R in series  
( if needed )  
IN  
control  
Logic signal  
(Refer to lead assignment for correct pin configuration)  
www.irf.com  
1

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