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IPP120N10S403AKSA1 PDF预览

IPP120N10S403AKSA1

更新时间: 2024-10-01 20:58:15
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网脉冲晶体管
页数 文件大小 规格书
9页 356K
描述
Power Field-Effect Transistor, 120A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220-3-1, 3 PIN

IPP120N10S403AKSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:14 weeks风险等级:5.7
雪崩能效等级(Eas):330 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):120 A最大漏源导通电阻:0.0039 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):480 A
参考标准:AEC-Q101表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPP120N10S403AKSA1 数据手册

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IPB120N10S4-03  
IPI120N10S4-03, IPP120N10S4-03  
OptiMOS®-T2 Power-Transistor  
Product Summary  
VDS  
100  
3.5  
V
RDS(on),max (SMD version)  
mW  
A
ID  
120  
Features  
• N-channel - Normal Level - Enhancement mode  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
4N1003  
4N1003  
4N1003  
IPB120N10S4-03  
IPI120N10S4-03  
IPP120N10S4-03  
PG-TO263-3-2  
PG-TO262-3-1  
PG-TO220-3-1  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
T C=25°C, V GS=10V1)  
I D  
Continuous drain current  
120  
120  
A
T C=100°C, V GS=10V2)  
Pulsed drain current2)  
I D,pulse  
E AS  
T C=25°C  
480  
770  
120  
±20  
250  
Avalanche energy, single pulse2)  
Avalanche current, single pulse  
Gate source voltage  
I D=60A  
mJ  
A
I AS  
-
V GS  
-
V
P tot  
T C=25°C  
Power dissipation  
W
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
°C  
Rev. 1.0  
page 1  
2014-06-30  

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