型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP019N08NF2S | INFINEON |
获取价格 |
Infineon's StrongIRFET? 2?power MOSFET?80 V features low RDS(on) of 1.9 mOhm, addressing a | |
IPP020N06N | INFINEON |
获取价格 |
New OptiMOS⢠40V and 60V | |
IPP020N08N5 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Me | |
IPP020N08N5AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Me | |
IPP022N12NM6 | INFINEON |
获取价格 |
This is a normal level 120 V MOSFET in?TO-220 | |
IPP023N04N G | INFINEON |
获取价格 |
OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器和 | |
IPP023N04NG | INFINEON |
获取价格 |
OptiMOS?3 Power-Transistor | |
IPP023N04NGXKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Me | |
IPP023N08N5 | INFINEON |
获取价格 |
OptiMOS™ 5 80 V power MOSFET, especially desi | |
IPP023N08N5AKSA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 120A I(D), 80V, 0.0023ohm, 1-Element, N-Channel, Silicon, M |