品牌 | Logo | 应用领域 |
英飞凌 - INFINEON | ![]() |
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页数 | 文件大小 | 规格书 |
11页 | 1675K | ![]() |
描述 | ||
The IPP018N10N5 is Infineon’s OptiMOS™ 5 power MOSFET 1.8 mOhm, 100 V in the industry standard TO-220 package for through-hole assembly. OptiMOS™ 5 power MOSFET in TO-220 targets light electric vehicles and battery management systems. |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP019N06NF2S | INFINEON |
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英飞凌 StrongIRFET™ 2 60 V 功率 MOSFET 具备仅为 1.9 mΩ |
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IPP019N08NF2S | INFINEON |
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Infineon's StrongIRFET? 2?power MOSFET?80 V features low RDS(on) of 1.9 mOhm, addressing a |
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IPP020N06N | INFINEON |
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New OptiMOS⢠40V and 60V |
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IPP020N08N5 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Me |
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IPP020N08N5AKSA1 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Me |
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IPP022N12NM6 | INFINEON |
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This is a normal level 120 V MOSFET in?TO-220 |
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IPP023N04N G | INFINEON |
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OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器和 |
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IPP023N04NG | INFINEON |
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OptiMOS?3 Power-Transistor |
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IPP023N04NGXKSA1 | INFINEON |
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Power Field-Effect Transistor, 90A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Me |
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IPP023N08N5 | INFINEON |
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OptiMOS™ 5 80 V power MOSFET, especially desi |
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