生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.71 | 雪崩能效等级(Eas): | 865 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 40 V |
最大漏极电流 (ID): | 120 A | 最大漏源导通电阻: | 0.0015 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 400 A | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP015N04NGXKSA1 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, M |
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IPP016N06NF2S | INFINEON |
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英飞凌 StrongIRFET? 2 60 V 功率 MOSFET 具备仅为 1.6 mΩ |
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IPP016N08NF2S | INFINEON |
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Infineon's StrongIRFET™ 2 power MOSFET 80 V f |
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IPP018N10N5 | INFINEON |
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The IPP018N10N5 is Infineon’s OptiMOS™ 5 powe |
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IPP019N06NF2S | INFINEON |
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英飞凌 StrongIRFET™ 2 60 V 功率 MOSFET 具备仅为 1.9 mΩ |
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IPP019N08NF2S | INFINEON |
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Infineon's StrongIRFET? 2?power MOSFET?80 V features low RDS(on) of 1.9 mOhm, addressing a |
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IPP020N06N | INFINEON |
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New OptiMOS⢠40V and 60V |
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IPP020N08N5 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Me |
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IPP020N08N5AKSA1 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Me |
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IPP022N12NM6 | INFINEON |
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This is a normal level 120 V MOSFET in?TO-220 |
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