型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPP015N04NG | INFINEON |
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OptiMOS?3 Power-Transistor | |
IPP015N04NGHKSA1 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, M | |
IPP015N04NGXKSA1 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, M | |
IPP016N06NF2S | INFINEON |
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英飞凌 StrongIRFET? 2 60 V 功率 MOSFET 具备仅为 1.6 mΩ | |
IPP016N08NF2S | INFINEON |
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Infineon's StrongIRFET™ 2 power MOSFET 80 V f | |
IPP018N10N5 | INFINEON |
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The IPP018N10N5 is Infineon’s OptiMOS™ 5 powe | |
IPP019N06NF2S | INFINEON |
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英飞凌 StrongIRFET™ 2 60 V 功率 MOSFET 具备仅为 1.9 mΩ | |
IPP019N08NF2S | INFINEON |
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Infineon's StrongIRFET? 2?power MOSFET?80 V features low RDS(on) of 1.9 mOhm, addressing a | |
IPP020N06N | INFINEON |
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New OptiMOS⢠40V and 60V | |
IPP020N08N5 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 80V, 0.002ohm, 1-Element, N-Channel, Silicon, Me |