Datasheet > IPN95R1K2P7

IPN95R1K2P7

更新时间： 2024-10-15 11:15:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1177K
描述
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market.

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中文翻译

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数据手册

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IPN95R1K2P7 数据手册

IPN95R1K2P7

MOSFET

PG-SOT223

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice

Theꢀlatestꢀ950VꢀCoolMOS™ꢀP7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀ950V

superꢀjunctionꢀtechnologiesꢀandꢀcombinesꢀbest-in-classꢀperformanceꢀwith

stateꢀofꢀtheꢀartꢀease-of-use,ꢀresultingꢀfromꢀInfineon’sꢀoverꢀ18ꢀyears

pioneeringꢀsuperꢀjunctionꢀtechnologyꢀinnovation.

Features

•ꢀBest-in-classꢀFOMꢀR_DS(on)ꢀ*ꢀE_oss;ꢀreducedꢀQ_g,ꢀC_iss,ꢀandꢀC_oss

•ꢀBest-in-classꢀSOT-223ꢀR_DS(on)

•ꢀBest-in-classꢀV_(GS)thꢀofꢀ3VꢀandꢀsmallestꢀꢀV_(GS)thꢀvariationꢀofꢀ±0.5V

•ꢀIntegratedꢀZenerꢀDiodeꢀESDꢀprotection

•ꢀBest-in-classꢀCoolMOS™ꢀqualityꢀandꢀreliability

•ꢀFullyꢀoptimizedꢀportfolio

Drain

Pin 2

Benefits

•ꢀBest-in-classꢀperformance

Gate

Pin 1

•ꢀEnablingꢀhigherꢀpowerꢀdensityꢀdesigns,ꢀBOMꢀsavingsꢀandꢀlower

assemblyꢀcosts

•ꢀEasyꢀtoꢀdriveꢀandꢀtoꢀparallel

Source

Pin 3

*1: Internal body diode

*2: Integrated ESD diode

•ꢀBetterꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures

•ꢀLessꢀproductionꢀissuesꢀandꢀreducedꢀfieldꢀreturns

•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀforꢀfineꢀtuningꢀofꢀdesigns

Potentialꢀapplications

RecommendedꢀforꢀflybackꢀtopologiesꢀforꢀLEDꢀLighting,ꢀlowꢀpower

ChargersꢀandꢀAdapters,ꢀSmartꢀMeter,ꢀAUXꢀpowerꢀandꢀIndustrialꢀpower.

AlsoꢀsuitableꢀforꢀPFCꢀstageꢀinꢀConsumerꢀandꢀSolarꢀapplications.

ProductꢀValidation:ꢀFullyꢀqualifiedꢀacc.ꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j=25°C

R_DS(on),max

Q_g,typ

Value

950

1.2

Unit

Ω

I_D

E_oss@ 500V

V_GS(th),typ

1.3

µJ

ESD class (HBM)

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPN95R1K2P7

PG-SOT223

95R1K2

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2018-06-01

12 3 4 5 6 7...14

中文翻译

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与IPN95R1K2P7相关器件

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IPN95R2K0P7	INFINEON	获取价格	Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest
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IPP015N04N G	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:40V;持续漏极电流（Id）（在25°C时
IPP015N04NF2S	INFINEON	获取价格	英飞凌 StrongIRFET™ 2 40 V 功率 MOSFET 具备仅为 1.5 mΩ
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