Datasheet > IPN95R1K2P7

IPN95R1K2P7

更新时间： 2024-11-21 11:15:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1177K
描述
Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IPN95R1K2P7 数据手册

IPN95R1K2P7

MOSFET

PG-SOT223

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice

Theꢀlatestꢀ950VꢀCoolMOS™ꢀP7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀ950V

superꢀjunctionꢀtechnologiesꢀandꢀcombinesꢀbest-in-classꢀperformanceꢀwith

stateꢀofꢀtheꢀartꢀease-of-use,ꢀresultingꢀfromꢀInfineon’sꢀoverꢀ18ꢀyears

pioneeringꢀsuperꢀjunctionꢀtechnologyꢀinnovation.

Features

•ꢀBest-in-classꢀFOMꢀR_DS(on)ꢀ*ꢀE_oss;ꢀreducedꢀQ_g,ꢀC_iss,ꢀandꢀC_oss

•ꢀBest-in-classꢀSOT-223ꢀR_DS(on)

•ꢀBest-in-classꢀV_(GS)thꢀofꢀ3VꢀandꢀsmallestꢀꢀV_(GS)thꢀvariationꢀofꢀ±0.5V

•ꢀIntegratedꢀZenerꢀDiodeꢀESDꢀprotection

•ꢀBest-in-classꢀCoolMOS™ꢀqualityꢀandꢀreliability

•ꢀFullyꢀoptimizedꢀportfolio

Drain

Pin 2

Benefits

•ꢀBest-in-classꢀperformance

Gate

Pin 1

•ꢀEnablingꢀhigherꢀpowerꢀdensityꢀdesigns,ꢀBOMꢀsavingsꢀandꢀlower

assemblyꢀcosts

•ꢀEasyꢀtoꢀdriveꢀandꢀtoꢀparallel

Source

Pin 3

*1: Internal body diode

*2: Integrated ESD diode

•ꢀBetterꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures

•ꢀLessꢀproductionꢀissuesꢀandꢀreducedꢀfieldꢀreturns

•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀforꢀfineꢀtuningꢀofꢀdesigns

Potentialꢀapplications

RecommendedꢀforꢀflybackꢀtopologiesꢀforꢀLEDꢀLighting,ꢀlowꢀpower

ChargersꢀandꢀAdapters,ꢀSmartꢀMeter,ꢀAUXꢀpowerꢀandꢀIndustrialꢀpower.

AlsoꢀsuitableꢀforꢀPFCꢀstageꢀinꢀConsumerꢀandꢀSolarꢀapplications.

ProductꢀValidation:ꢀFullyꢀqualifiedꢀacc.ꢀJEDECꢀforꢀIndustrialꢀApplications

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate

orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters

Parameter

V_DS@ T_j=25°C

R_DS(on),max

Q_g,typ

Value

950

1.2

Unit

Ω

I_D

E_oss@ 500V

V_GS(th),typ

1.3

µJ

ESD class (HBM)

Typeꢀ/ꢀOrderingꢀCode

Package

Marking

RelatedꢀLinks

IPN95R1K2P7

PG-SOT223

95R1K2

see Appendix A

Final Data Sheet

Rev.ꢀ2.0,ꢀꢀ2018-06-01

12 3 4 5 6 7...14

中文翻译

下载PDF

与IPN95R1K2P7相关器件

型号	品牌	获取价格	描述	数据表
IPN95R2K0P7	INFINEON	获取价格	Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest
IPN95R3K7P7	INFINEON	获取价格	Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest
IPP011N04NF2S	INFINEON	获取价格	英飞凌 StrongIRFET™ 2 40 V 功率 MOSFET 具备仅为 1.15 m
IPP013N04NF2S	INFINEON	获取价格	英飞凌 StrongIRFET™ 2 40 V 功率 MOSFET 具备仅为 1.3 mΩ
IPP014N06NF2S	INFINEON	获取价格	英飞凌 StrongIRFET™ 2 60 V 功率 MOSFET 具备仅为 1.4 mΩ
IPP015N04N G	INFINEON	获取价格	OptiMOS? 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和
IPP015N04N G	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:40V;持续漏极电流（Id）（在25°C时
IPP015N04NF2S	INFINEON	获取价格	英飞凌 StrongIRFET™ 2 40 V 功率 MOSFET 具备仅为 1.5 mΩ
IPP015N04NG	INFINEON	获取价格	OptiMOS?3 Power-Transistor
IPP015N04NGHKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, M

与IPN95R1K2P7相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

IPN95R1K2P7

IPN95R1K2P7 数据手册

与IPN95R1K2P7相关器件

与IPN95R1K2P7相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IPN95R1K2P7

IPN95R1K2P7 数据手册

与IPN95R1K2P7相关器件

与IPN95R1K2P7相关文章

您还可以找

您在本页遇到什么问题？