5秒后页面跳转
IPLK80R1K4P7 PDF预览

IPLK80R1K4P7

更新时间: 2024-11-06 14:55:51
品牌 Logo 应用领域
英飞凌 - INFINEON 开关
页数 文件大小 规格书
13页 1802K
描述
800V CoolMOS?P7超结 MOSFET 系列是低功耗开关电源应用的完美之选,完全满足市场对性能、易用性和性价比方面的需求。其主要针对反激式应用,包括适配器和充电器、音频开关电源、辅助和工业电源。?

IPLK80R1K4P7 数据手册

 浏览型号IPLK80R1K4P7的Datasheet PDF文件第2页浏览型号IPLK80R1K4P7的Datasheet PDF文件第3页浏览型号IPLK80R1K4P7的Datasheet PDF文件第4页浏览型号IPLK80R1K4P7的Datasheet PDF文件第5页浏览型号IPLK80R1K4P7的Datasheet PDF文件第6页浏览型号IPLK80R1K4P7的Datasheet PDF文件第7页 
IPLK80R1K4P7  
MOSFET  
ThinPAKꢀ5x6  
8
800VꢀCoolMOSªꢀP7ꢀPowerꢀDevice  
7
Theꢀlatestꢀ800VꢀCoolMOS™ꢀP7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀ800V  
superꢀjunctionꢀtechnologiesꢀandꢀcombinesꢀbest-in-classꢀperformanceꢀwith  
stateꢀofꢀtheꢀartꢀease-of-use,ꢀresultingꢀfromꢀInfineon’sꢀoverꢀ18ꢀyears  
pioneeringꢀsuperꢀjunctionꢀtechnologyꢀinnovation.  
6
5
Features  
1
•ꢀBest-in-classꢀFOMꢀRDS(on)ꢀ*ꢀEoss;ꢀreducedꢀQg,ꢀCiss,ꢀandꢀCoss  
•ꢀBest-in-classꢀDPAKꢀRDS(on)  
2
3
4
•ꢀBest-in-classꢀV(GS)thꢀofꢀ3VꢀandꢀsmallestꢀꢀV(GS)thꢀvariationꢀofꢀ±0.5V  
•ꢀIntegratedꢀZenerꢀDiodeꢀESDꢀprotection  
•ꢀFullyꢀoptimizedꢀportfolio  
*1: Internal body diode  
*2: Internal ESD diode  
Drain  
Pin 5,6,7,8  
Benefits  
•ꢀBest-in-classꢀperformance  
•ꢀEnablingꢀhigherꢀpowerꢀdensityꢀdesigns,ꢀBOMꢀsavingsꢀandꢀlower  
assemblyꢀcosts  
*1  
Gate  
Pin 4  
*2  
Kelvin  
Source  
Pin 3  
•ꢀEasyꢀtoꢀdriveꢀandꢀtoꢀparallel  
Source  
Pin 1,2  
•ꢀBetterꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures  
•ꢀLessꢀproductionꢀissuesꢀandꢀreducedꢀfieldꢀreturns  
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀforꢀfineꢀtuningꢀofꢀdesigns  
Potentialꢀapplications  
Recommendedꢀforꢀhardꢀandꢀsoftꢀswitchingꢀflybackꢀtopologiesꢀforꢀlow  
powerꢀChargersꢀandꢀAdapters.  
Productꢀvalidation  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Pleaseꢀnote:ꢀTheꢀsourceꢀandꢀsenseꢀsourceꢀpinsꢀareꢀnotꢀexchangeable.  
Theirꢀexchangeꢀmightꢀleadꢀtoꢀmalfunction.ꢀForꢀparallelingꢀ4pinꢀMOSFET  
devicesꢀtheꢀplacementꢀofꢀtheꢀgateꢀresistorꢀisꢀgenerallyꢀrecommendedꢀtoꢀbe  
onꢀtheꢀDriverꢀSourceꢀinsteadꢀofꢀtheꢀGate.  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
VDS @ Tj=25°C  
RDS(on),max  
Qg,typ  
Value  
800  
1.4  
10  
Unit  
V
nC  
A
ID  
4
Eoss @ 500V  
VGS(th),typ  
0.9  
3
µJ  
V
ESD class (HBM)  
2
-
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
IPLK80R1K4P7  
ThinPAK 5x6 SMD  
80R1K4P7  
see Appendix A  
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2021-07-23  

与IPLK80R1K4P7相关器件

型号 品牌 获取价格 描述 数据表
IPLK80R2K0P7 INFINEON

获取价格

800V CoolMOS?P7超结 MOSFET 系列是低功耗开关电源应用的完美之选,完全
IPLK80R600P7 INFINEON

获取价格

800V CoolMOS?P7超结 MOSFET 系列是低功耗开关电源应用的完美之选,完全
IPLK80R750P7 INFINEON

获取价格

The?800V CoolMOS? P7?superjunction MOSFET series?is a perfect fit for low-power?SMPS appli
IPLK80R900P7 INFINEON

获取价格

800V CoolMOS?P7超结 MOSFET 系列是低功耗开关电源应用的完美之选,完全
IPLU250N04S4-1R7 INFINEON

获取价格

N-channel - Enhancement mode
IPLU250N04S4-1R7_15 INFINEON

获取价格

N-channel - Enhancement mode
IPLU300N04S4-1R1 INFINEON

获取价格

Power Field-Effect Transistor,
IPLU300N04S41R1XTMA1 INFINEON

获取价格

Power Field-Effect Transistor, 300A I(D), 40V, 0.00115ohm, 1-Element, N-Channel, Silicon,
IPLU300N04S4-R7 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPLU300N04S4-R8 INFINEON

获取价格

TOLL 是英飞凌开发的针对高电流汽车电子产品的新型 PowerMOS 封装。客户福利:-