IPLK60R1K5PFD7
MOSFET
ThinPAKꢀ5x6
8
600VꢀCoolMOSªꢀPFD7ꢀSJꢀPowerꢀDevice
7
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
6
5
TheꢀlatestꢀCoolMOS™ꢀPFD7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtarget
costꢀsensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,
motorꢀdrive,ꢀlighting,ꢀetc.
TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction
MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof
theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency
standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing
towardsꢀveryꢀslimꢀdesigns.
1
2
3
4
*1: Internal body diode
*2: Internal ESD diode
Drain
Pin 5,6,7,8
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRDS(on)*QgꢀandꢀRDS(on)*Eoss
•ꢀLowꢀswitchingꢀlossesꢀEoss,ꢀexcellentꢀthermalꢀbehavior
•ꢀFastꢀbodyꢀdiode
*1
Gate
Pin 4
*2
•ꢀWideꢀrangeꢀportfolioꢀofꢀRDS(on)ꢀandꢀpackageꢀvariations
•ꢀIntegratedꢀzenerꢀdiode
Kelvin
Source
Pin 3
Source
Pin 1,2
Benefits
•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors
•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies
•ꢀExcellentꢀcommutationꢀruggedness
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀandꢀoptimizeꢀtheꢀdesign
•ꢀHighꢀESDꢀruggedness
Potentialꢀapplications
RecommendedꢀforꢀZVSꢀtopologiesꢀusedꢀinꢀhighꢀdensityꢀchargers,
adapters,ꢀlightingꢀandꢀmotorꢀdrivesꢀapplications,ꢀetc.
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
VDS @ Tj,max
RDS(on),max
Value
650
1500
4.6
Unit
V
mΩ
nC
A
Qg,typ
ID,pulse
6.0
Eoss @ 400V
Body diode diF/dt
ESD Class (HBM)
0.5
µJ
1300
2
A/µs
-
Typeꢀ/ꢀOrderingꢀCode
Package
ThinPAK 5x6 SMD
Marking
RelatedꢀLinks
see Appendix A
IPLK60R1K5PFD7
60R1K5D7
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2020-01-22